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Effect of electron localization in theoretical design of Ni-Mn-Ga based magnetic shape memory alloys

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    SYSNO ASEP0543903
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleEffect of electron localization in theoretical design of Ni-Mn-Ga based magnetic shape memory alloys
    Author(s) Zelený, M. (CZ)
    Sedlák, Petr (UT-L) RID, ORCID
    Heczko, Oleg (FZU-D) RID, ORCID
    Seiner, Hanuš (UT-L) RID, ORCID
    Veřtát, Petr (FZU-D) RID, ORCID
    Obata, M. (JP)
    Kotani, T. (JP)
    Oda, T. (JP)
    Straka, Ladislav (FZU-D) ORCID
    Number of authors9
    Article number109917
    Source TitleMaterials and Design. - : Elsevier - ISSN 0264-1275
    Roč. 209, November (2021)
    Number of pages10 s.
    Publication formPrint - P
    Languageeng - English
    CountryGB - United Kingdom
    Keywordsmartensitic transformation ; magnetic shape memory alloys ; phase stability ; electron localization ; Ab initio calculations ; exchange-correlation energy
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Subject RIV - cooperationInstitute of Physics - Solid Matter Physics ; Magnetism
    R&D ProjectsGA21-06613S GA ČR - Czech Science Foundation (CSF)
    LM2018096 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportUT-L - RVO:61388998 ; FZU-D - RVO:68378271
    UT WOS000697472400001
    EID SCOPUS85108964394
    DOI10.1016/j.matdes.2021.109917
    AnnotationThe precise determination of the stability of different martensitic phases is an essential task in the successful design of (magnetic) shape memory alloys. We evaluate the effect of electron delocalization correction on the predictive power of density functional theory for Ni-Mn-Ga, the prototype magnetic shape memory compound. Using the corrected Hubbard-model-based generalized gradient approximation (GGA+U), we varied the Coulomb repulsion parameter U from 0 eV to 3 eV to reveal the evolution of predicted material parameters. The increasing localization on Mn sites results in the increasing stabilization of 10M modulated structure in stoichiometric Ni2MnGa in agreement with experiment whereas uncorrected GGA and meta-GGA functional provide the lowest energy for 4O modulated structure and non-modulated structure, respectively. GGA+U calculations indicate that 10M structure is more stable than other martensitic structures for U > 1.2 eV. The key features of density of states (DOS) responsible for the stabilization or destabilization of particular martensitic phases calculated with GGA+U are found also in DOS calculated with advanced quasi-particle self-consistent GW (QSGW) method. It supports the physical background of Hubbard correction. Moreover, the calculations with U = 1.8 eV provide the best agreement with experimental data for lattice parameters of stoichiometric and off-stoichiometric alloys.
    WorkplaceInstitute of Thermomechanics
    ContactMarie Kajprová, kajprova@it.cas.cz, Tel.: 266 053 154 ; Jana Lahovská, jaja@it.cas.cz, Tel.: 266 053 823
    Year of Publishing2022
    Electronic addresshttps://www.sciencedirect.com/science/article/pii/S0264127521004706/pdfft?isDTMRedir=true&download=true
Number of the records: 1  

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