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RIR MAPLE Procedure for Deposition of Carbon Rich Si/C/H Films
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SYSNO ASEP 0424399 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title RIR MAPLE Procedure for Deposition of Carbon Rich Si/C/H Films Author(s) Dřínek, Vladislav (UCHP-M) RID, ORCID, SAI
Strašák, Tomáš (UCHP-M) RID, ORCID, SAI
Novotný, F. (CZ)
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Bastl, Zdeněk (UFCH-W) RID, ORCIDSource Title Applied Surface Science. - : Elsevier - ISSN 0169-4332
Roč. 292, FEB 15 (2014), s. 413-419Number of pages 7 s. Language eng - English Country NL - Netherlands Keywords MAPLE ; dendrimer ; SiC ; DLC ; cross-kinking Subject RIV CA - Inorganic Chemistry R&D Projects GA13-25747S GA ČR - Czech Science Foundation (CSF) Institutional support UCHP-M - RVO:67985858 ; UFCH-W - RVO:61388955 UT WOS 000330208500056 DOI 10.1016/j.apsusc.2013.11.153 Annotation We applied the resonant infrared matrix assisted pulsed laser evaporation (RIR MAPLE) technique todemonstrate a new approach to a controlled deposition of carbon rich amorphous Si/C/H film. In absenceof radicals and accelerated species commonly generated in PECVD and sputtering setups, the RIR MAPLEmethod does not decompose precursor molecules. Moreover, unlike the standard MAPLE procedure, inwhich solvent molecules absorb laser energy from excimer or near infrared lasers, we applied the pulsedTEA CO2laser to excite the dendrimer precursor molecules in a frozen target. In this manner we achievedjust cross-linking of the starting precursor on substrates and the deposition of carbon rich Si/C/H film. Thefilm was analyzed by Fourier Transformed Infrared (FTIR), UV/VIS, Raman and X-ray Photoelectron (XPS)spectroscopy and Atomic Force Microscopy (AFM) technique. According to analyses the film retained theprecursor elemental composition free of graphitic (sp2) clusters. In course of reaction only the peripheralallyl groups containing C=C bonds were opened to achieve cross-linking. Whereas annealing to 300◦Cwas necessary for the elimination of =C–H1,2bonds in the films prepared at 200◦C, those bonds vanishedcompletely for the films prepared at substrate temperature 255◦C. The film posseses a smooth surfacewith root mean square (RMS) parameter up to 10 nm within scanned distance 2.5 m... Workplace Institute of Chemical Process Fundamentals Contact Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227 Year of Publishing 2014
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