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Effect of Silver Doping on the TiO2 for Photocatalytic Reduction of CO2

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    SYSNO ASEP0345255
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeThe record was not marked in the RIV
    TitleEffect of Silver Doping on the TiO2 for Photocatalytic Reduction of CO2
    Author(s) Kočí, K. (CZ)
    Matějů, K. (CZ)
    Obalová, L. (CZ)
    Krejčíková, Simona (UCHP-M) RID, ORCID, SAI
    Lacný, Z. (CZ)
    Plachá, D. (CZ)
    Čapek, L. (CZ)
    Hospodková, Alice (FZU-D) RID, ORCID, SAI
    Šolcová, Olga (UCHP-M) RID, ORCID, SAI
    Source TitleProceedings. - Bratislava : Slovak University of Technology, 2010 / Markoš J. - ISBN 978-80-227-3290-1
    Pagess. 204
    Number of pages1 s.
    Publication formCD-ROM - CD-ROM
    ActionInternational Conference of Slovak Society of Chemical Engineering /37./
    Event date24.05.2010-28.05.2010
    VEvent locationTatranské Matliare
    CountrySK - Slovakia
    Event typeEUR
    Languageeng - English
    CountrySK - Slovakia
    KeywordsAg doping ; TiO2 ; CO2 reduction
    Subject RIVCF - Physical ; Theoretical Chemistry
    R&D ProjectsGD203/08/H032 GA ČR - Czech Science Foundation (CSF)
    KAN400720701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z40720504 - UCHP-M (2005-2011)
    AV0Z10100521 - FZU-D (2005-2011)
    AnnotationPure TiO2 and various silver-enriched TiO2 powders were prepared by the sol-gel process controlled in the reverse micellar environment. The catalysts were tested in CO2 photocatalytic reduction and characterized by X-ray diffraction (XRD), nitrogen adsorption measurement and UV–Vis. Methane and methanol were the main reduction products. The yield of methane and methanol increase when modifying the TiO2 by silver incorporation is caused by two mechanisms: up to 5% of Ag in TiO2 the Ag impurity band inside the TiO2 bandgap decreases the absorption edge and increases so the electron-hole pair generation, above 5% of Ag in TiO2 Ag metallic clusters are formed in TiO2 crystals with Shottky barrier at the metal–semiconductor interface, which spatially separates electron and holes and increases their lifetime (decreases probability of their recombination).
    WorkplaceInstitute of Chemical Process Fundamentals
    ContactEva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227
    Year of Publishing2011
Number of the records: 1  

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