Number of the records: 1  

Behaviour of an optically trapped probe approaching a dielectric interface

  1. 1.
    SYSNO ASEP0205624
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleBehaviour of an optically trapped probe approaching a dielectric interface
    Author(s) Jákl, Petr (UPT-D) RID, ORCID, SAI
    Šerý, Mojmír (UPT-D) RID, SAI
    Ježek, Jan (UPT-D) RID, ORCID, SAI
    Jonáš, Alexandr (UPT-D) RID, SAI, ORCID
    Liška, M. (CZ)
    Zemánek, Pavel (UPT-D) RID, SAI, ORCID
    Source TitleJournal of Modern Optics - ISSN 0950-0340
    Roč. 50, č. 10 (2003), s. 1615 - 1625
    Number of pages11 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordstrapping beam ; optically trapped probe ; standing-wave
    Subject RIVBH - Optics, Masers, Lasers
    R&D ProjectsGA101/00/0974 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z2065902 - UPT-D
    AnnotationThe way in which reflection of the trapping beam from a dielectric interface influences the distance of the trapped sphere from the beam waist is studied theoretically and experimentally. The reflected wave interferes with the incident wave and they create a standing-wave component in the total axial intensity distribution. This component then modulates the trapping potential and creates several possible equilibrium positions for the trapped sphere. When the beam waist approaches the surface, the potential profile changes, which consequently causes jumps of the trapped probe from its current location to a deeper potential well. We suggested theoretically and proved experimentally that the magnitude of these unwanted jumps between the neighbouring equilibrium positions can be decreased by a suitable size of the sphere.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2004

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.