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Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures
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SYSNO ASEP 0571963 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures Author(s) Bulgakov, Alexander (FZU-D) ORCID
Beránek, Jiří (FZU-D)
Volodin, V.A. (RU)
Cheng, Y. (RU)
Levy, Yoann (FZU-D)
Nagisetty, S.S. (DE)
Zukerstein, Martin (FZU-D) ORCID
Popov, A. A. (RU)
Bulgakova, Nadezhda M. (FZU-D) ORCIDNumber of authors 9 Article number 3572 Source Title Materials. - : MDPI
Roč. 16, č. 9 (2023)Number of pages 12 s. Language eng - English Country CH - Switzerland Keywords silicon–germanium multilayer structures ; thin films ; ultrashort infrared laser annealing ; selective crystallization ; defect accumulation ; Raman spectroscopy Subject RIV BH - Optics, Masers, Lasers OECD category Optics (including laser optics and quantum optics) R&D Projects EF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000987318600001 EID SCOPUS 85159364096 DOI 10.3390/ma16093572 Annotation Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si–Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2024 Electronic address https://hdl.handle.net/11104/0342818
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