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Spin pumping in nanolayers of WS.sub.2./sub./Co.sub.2./sub.FeAl heterostructures: Large spin mixing conductance and spin transparency

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    SYSNO ASEP0567150
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleSpin pumping in nanolayers of WS2/Co2FeAl heterostructures: Large spin mixing conductance and spin transparency
    Author(s) Hait, S. (IN)
    Gupta, N.K. (IN)
    Sharma, N. (JP)
    Pandey, L. (JP)
    Kumar, N. (JP)
    Barwal, V. (JP)
    Kumar, Prabhat (FZU-D) ORCID
    Chaudhary, S. (IN)
    Number of authors8
    Article number133901
    Source TitleJournal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
    Roč. 132, č. 13 (2022)
    Number of pages10 s.
    Languageeng - English
    CountryUS - United States
    Keywordsspin pumping ; heterostructures ; large spin mixing conductance ; spin transparency
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000888258100016
    EID SCOPUS85139877971
    DOI10.1063/5.0107655
    AnnotationMaterials with high spin–orbit coupling (SOC) are a prerequisite for the realization of spin–orbit torque-based magnetic memories. Transition metal dichalcogenides (TMDs) are an apt choice for such applications due to their high SOC strength. In this work, we have investigated the spin pumping phenomenon at the interface between thin tungsten disulphide (WS2) films and Co2FeAl (CFA) Heusler alloy films by performing ferromagnetic resonance (FMR) measurements on WS2/CFA heterostructures capped with the 4 nm thin Al film. While Raman spectroscopy conclusively proves the number of monolayers in the WS2 films, atomic force microscopy and x-ray reflectivity measurements were used to quantify the smoothness of the grown interfaces (<0.4 nm) as well as the individual layer thicknesses in the heterostructure stacks. High-quality TMDs can be used as efficient materials for magnetic memory device applications.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2023
    Electronic addresshttps://doi.org/10.1063/5.0107655
Number of the records: 1  

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