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Enhancing critical current density of bulk MgB.sub.2./sub. via nanoscale boron and Dy.sub.2./sub.O.sub.3./sub. doping

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    SYSNO ASEP0565188
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleEnhancing critical current density of bulk MgB2 via nanoscale boron and Dy2O3 doping
    Author(s) Miryala, M. (JP)
    Kitamoto, K. (JP)
    Arvapalli, S.S. (JP)
    Das, D. (IN)
    Jirsa, Miloš (FZU-D) RID, ORCID
    Murakami, M. (JP)
    Mamidanna, S.R.R. (IN)
    Number of authors7
    Article number2200487
    Source TitleAdvanced Engineering Materials. - : Wiley - ISSN 1438-1656
    Roč. 24, č. 11 (2022)
    Number of pages7 s.
    Languageeng - English
    CountryDE - Germany
    Keywordscritical current density (J(c)) ; Dy2O3 doping ; flux pinning ; MgB2 ; nanoscale boron ; Raman spectroscopy
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000829204400001
    EID SCOPUS85134625678
    DOI10.1002/adem.202200487
    AnnotationModerate critical current density (Jc) has been a long-lasting problem in bulkMgB2superconductors. We show a certain increment inJcof bulk MgB2via theuse of amorphous boron precursor together with Dy2O3doping. Dy2O3dopantconcentration varies from 0 to 2 wt%. X-Ray diffraction (XRD) shows the for-mation of DyB4particles. The critical temperature (Tc) is not affected by Dy2O3doping and stands close to 38 K, showing that there is no Dy interaction with theMgB2lattice. Microstructural studies show nanometer-sized MgB2grains. A highself-fieldJcof around 380 kA cm 2is achieved at 20 K within the Dy2O3dopingrange of 0.5–1.5 wt%. At around 1 wt% Dy2O3doping an improved high-fieldperformance, 90 kA cm 2at 2 T, 20 K, is observed. In theflux pinning diagram,1 wt% Dy2O3doping caused a peak shift from 0.19 (0 wt%) to 0.23. This indicatessecondary pinning by DyB4and lattice strains. Raman studies show the increasein the phonon density of states (PDOS) with increasing Dy2O3doping.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2023
    Electronic addresshttps://hdl.handle.net/11104/0336703
Number of the records: 1  

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