Number of the records: 1  

Large imprint in epitaxial 0.67Pb(Mg.sub.1/3./sub.Nb.sub.2/3./sub.)O.sub.3./sub.-0.33PbTiO.sub.3./sub. thin films for piezoelectric energy harvesting applications

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    SYSNO ASEP0564640
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleLarge imprint in epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films for piezoelectric energy harvesting applications
    Author(s) Belhadi, J. (FR)
    Hanani, Z. (SI)
    Shepelin, N.A. (CH)
    Bobnar, V. (SI)
    Koster, G. (SI)
    Hlinka, Jiří (FZU-D) RID, ORCID
    Pergolesi, D. (CH)
    Lippert, T. (CH)
    El Marssi, M. (FR)
    Spreitzer, M. (SI)
    Number of authors10
    Article number182903
    Source TitleApplied Physics Letters. - : AIP Publishing - ISSN 0003-6951
    Roč. 121, č. 21 (2022)
    Number of pages6 s.
    Languageeng - English
    CountryUS - United States
    Keywordsrelaxor ferroelectrics ; piezoelectric ; energy harvesting ; thin films ; PMN-PT
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000886108300003
    EID SCOPUS85143422260
    DOI10.1063/5.0115777
    AnnotationTuning and stabilizing a large imprint in epitaxial relaxor ferroelectric thin films is one of the key factors for designing micro-electromechanical devices with an enhanced figure of merit (FOM). The PMN–33PT is observed to grow coherently on SSO substrates and exhibits large tetragonality compared to bulk PMN–33PT, while on DSO substrates (lattice mismatch of −1.9%), the PMN–33PT film is almost completely relaxed and shows reduced tetragonality. Due to the compressive epitaxial strain, the fully strained PMN–33PT film displays typical ferroelectric P–E hysteresis loops, while the relaxed sample shows relaxor-like P–E loops. The studied PMN–33PT films hold great promise to maximize the FOM toward applications in piezoelectric devices.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2023
    Electronic addresshttps://doi.org/10.1063/5.0115777
Number of the records: 1  

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