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Large imprint in epitaxial 0.67Pb(Mg.sub.1/3./sub.Nb.sub.2/3./sub.)O.sub.3./sub.-0.33PbTiO.sub.3./sub. thin films for piezoelectric energy harvesting applications
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SYSNO ASEP 0564640 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Large imprint in epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 thin films for piezoelectric energy harvesting applications Author(s) Belhadi, J. (FR)
Hanani, Z. (SI)
Shepelin, N.A. (CH)
Bobnar, V. (SI)
Koster, G. (SI)
Hlinka, Jiří (FZU-D) RID, ORCID
Pergolesi, D. (CH)
Lippert, T. (CH)
El Marssi, M. (FR)
Spreitzer, M. (SI)Number of authors 10 Article number 182903 Source Title Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 121, č. 21 (2022)Number of pages 6 s. Language eng - English Country US - United States Keywords relaxor ferroelectrics ; piezoelectric ; energy harvesting ; thin films ; PMN-PT Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000886108300003 EID SCOPUS 85143422260 DOI 10.1063/5.0115777 Annotation Tuning and stabilizing a large imprint in epitaxial relaxor ferroelectric thin films is one of the key factors for designing micro-electromechanical devices with an enhanced figure of merit (FOM). The PMN–33PT is observed to grow coherently on SSO substrates and exhibits large tetragonality compared to bulk PMN–33PT, while on DSO substrates (lattice mismatch of −1.9%), the PMN–33PT film is almost completely relaxed and shows reduced tetragonality. Due to the compressive epitaxial strain, the fully strained PMN–33PT film displays typical ferroelectric P–E hysteresis loops, while the relaxed sample shows relaxor-like P–E loops. The studied PMN–33PT films hold great promise to maximize the FOM toward applications in piezoelectric devices.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://doi.org/10.1063/5.0115777
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