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Advances in RF glow discharge optical emission spectrometry characterization of intrinsic and boron-doped diamond coatings

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    SYSNO ASEP0561905
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleAdvances in RF glow discharge optical emission spectrometry characterization of intrinsic and boron-doped diamond coatings
    Author(s) Sharma, Dhananjay K. (FZU-D) ORCID
    Girao, A.V. (PT)
    Chapon, P. (FR)
    Neto, M.A. (PT)
    Oliveira, F.J. (PT)
    Silva, R.F. (PT)
    Number of authors6
    Source TitleACS Applied Materials and Interfaces. - : American Chemical Society - ISSN 1944-8244
    Roč. 14, č. 5 (2022), s. 7405-7416
    Number of pages12 s.
    Languageeng - English
    CountryUS - United States
    KeywordsGD-OES ; diamond ; boron doping ; XPS ; Rietveld refinement ; Raman spectroscopy ; HFCVD
    OECD categoryFluids and plasma physics (including surface physics)
    R&D ProjectsEF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000757775400001
    EID SCOPUS85124156495
    DOI10.1021/acsami.1c20785
    AnnotationAccurate determination of the effective doping range within diamond thin films is important for fine-tuning of electrical conductivity. Nevertheless, it is not easily attainable by the commonly adopted techniques. In this work, pulsed RF glow discharge optical emission spectrometry (GD-OES) combined with ultrafast sputtering (UFS) is applied for the first time to acquire elemental depth profiles of intrinsic diamond coatings and boron content bulk distribution in films. The GD-OES practical advances presented here enabled quick elemental profiling with noteworthy depth resolution and determination of the film interfaces. The erosion rates and layer thicknesses were measured using differential interferometric profiling (DIP), demonstrating a close correlation between the coating thickness and the carbon/hydrogen gas ratio.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2023
    Electronic addresshttps://doi.org/10.1021/acsami.1c20785
Number of the records: 1  

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