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Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO.sub.2./sub./TiO.sub.2./sub./IrO.sub.2./sub. capacitors
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SYSNO ASEP 0561797 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO2/TiO2/IrO2 capacitors Author(s) Maier, F.J. (AT)
Schneider, M. (AT)
Artemenko, Anna (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Stoeger-Pollach, M. (AT)
Schmid, U. (AT)Number of authors 6 Article number 095301 Source Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 131, č. 9 (2022)Number of pages 11 s. Language eng - English Country US - United States Keywords IrO2/TiO2/IrO2 capacitors ; dielectric properties ; temperature dependence Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Electrical and electronic engineering Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000772778300011 EID SCOPUS 85126355780 DOI 10.1063/5.0080139 Annotation Titanium dioxide (TiO2) is a high-performance material for emerging device applications, such as in resistive switching memories, in high-k capacitors, or, due to its flexoelectricity, in micro/nano-electro-mechanical systems. Enhanced electrical properties of TiO2 are ensured, especially by a careful selection of the bottom electrode material. Iridium dioxide (IrO2) is an excellent choice, as it favors the high-k rutile phase growth of TiO2. In this study, we introduce the fabrication of IrO2/TiO2/IrO2 capacitors and thoroughly characterize their electrical behavior. These capacitors show a dielectric constant for low temperature sputtered TiO2 of ∼70. From leakage current measurements, a coupled capacitive–memristive behavior is determined, which is assumed due to the presence of a reduced TiO2−x layer at the IrO2/TiO2 interface observed from transmission electron microscopy analyses.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://hdl.handle.net/11104/0334300
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