Number of the records: 1  

The electronic properties of SrTiO.sub.3-δ./sub. with oxygen vacancies or substitutions

  1. 1.
    SYSNO ASEP0561024
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleThe electronic properties of SrTiO3-δ with oxygen vacancies or substitutions
    Author(s) Rusevich, L.L. (LT)
    Tyunina, Marina (FZU-D) ORCID
    Kotomin, E.A. (LT)
    Nepomniashchaia, Natalia (FZU-D) ORCID
    Dejneka, Alexandr (FZU-D) RID, ORCID
    Number of authors5
    Article number23341
    Source TitleScientific Reports. - : Nature Publishing Group - ISSN 2045-2322
    Roč. 11, č. 1 (2021)
    Number of pages8 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordselectronic properties ; including bandgap conductivity ; multifunctional ; perovskite oxide ; ferroelectics
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA19-09671S GA ČR - Czech Science Foundation (CSF)
    EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000728529200065
    EID SCOPUS85120874891
    DOI10.1038/s41598-021-02751-9
    AnnotationThe electronic properties, including bandgap and conductivity, are critical for nearly all applications of multifunctional perovskite oxide ferroelectrics. Here we analysed possibility to induce semiconductor behaviour in these materials, which are basically insulators, by replacement of several percent of oxygen atoms with nitrogen, hydrogen, or vacancies. We explored this approach for one of the best studied members of the large family of ABO3 perovskite ferroelectrics — strontium titanate (SrTiO3). The atomic and electronic structure of defects were theoretically investigated using the large-scale first-principles calculations for both bulk crystal and thin films. The results of calculations were experimentally verified by studies of the optical properties at photon energies from 25 meV to 8.8 eV for in-situ prepared thin films.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2023
    Electronic addresshttps://hdl.handle.net/11104/0333780
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.