Number of the records: 1  

Mediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale

  1. 1.
    SYSNO ASEP0560529
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleMediator-assisted synthesis of WS2 with ultrahigh-optoelectronic performance at multi-wafer scale
    Author(s) Chen, Y.-S. (TW)
    Chiu, S.-K. (TW)
    Tsai, D.-L. (TW)
    Liu, Ch.-Y. (TW)
    Ting, H.-A. (TW)
    Yao, Y.-Ch. (TW)
    Son, H. (KR)
    Haider, Golam (UFCH-W) ORCID, RID
    Kalbáč, Martin (UFCH-W) RID, ORCID
    Ting, Ch.-Ch. (TW)
    Chen, Y. F. (TW)
    Hofmann, M. (TW)
    Hsieh, Y.-P. (TW)
    Article number54
    Source TitleNPJ 2D MATER APPL. - : Nature Publishing Group
    Roč. 6, č. 1 (2022)
    Number of pages8 s.
    Languageeng - English
    CountryDE - Germany
    KeywordsQUALITY MONOLAYER WS2 ; PHOTOLUMINISCENCE ; OPTICAL-PROPERTIES
    Subject RIVCF - Physical ; Theoretical Chemistry
    OECD categoryPhysical chemistry
    R&D ProjectsGX20-08633X GA ČR - Czech Science Foundation (CSF)
    Method of publishingOpen access
    Institutional supportUFCH-W - RVO:61388955
    UT WOS000841230000001
    EID SCOPUS85136154299
    DOI10.1038/s41699-022-00329-1
    AnnotationThe integration of 2D materials into future applications relies on advances in their quality and production. We here report a synthesis method that achieves ultrahigh optoelectronic performance at unprecedented fabrication scales. A mediator-assisted chemical vapor deposition process yields tungsten-disulfide (WS2) with near-unity photoluminescence quantum yield, superior photosensitivity and improved environmental stability. This enhancement is due to the decrease in the density of lattice defects and charge traps brought about by the self-regulating nature of the growth process. This robustness in the presence of precursor variability enables the high-throughput growth in atomically confined stacks and achieves uniform synthesis of single-layer WS2 on dozens of closely packed wafers. Our approach enhances the scientific and commercial potential of 2D materials as demonstrated in producing large-scale arrays of record-breaking optoelectronic devices.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2023
    Electronic addresshttps://hdl.handle.net/11104/0333444
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.