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Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping
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SYSNO ASEP 0559108 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping Author(s) Melníková Komínková, Zuzana (UFCH-W) ORCID
Valeš, Václav (UFCH-W) RID, ORCID
Frank, Otakar (UFCH-W) RID, ORCID
Kalbáč, Martin (UFCH-W) RID, ORCIDArticle number 107739 Source Title Microchemical Journal. - : Elsevier - ISSN 0026-265X
Roč. 181, OCT 2022 (2022)Number of pages 7 s. Language eng - English Country US - United States Keywords 2D’ mode ; Graphene ; In-situ spectroelectrochemistry ; Raman spectroscopy Subject RIV CG - Electrochemistry OECD category Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) R&D Projects GX20-08633X GA ČR - Czech Science Foundation (CSF) EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support UFCH-W - RVO:61388955 UT WOS 000826538200003 EID SCOPUS 85133275203 DOI 10.1016/j.microc.2022.107739 Annotation Effective charge doping and control of the Fermi level shift is a crucial aspect in graphene device fabrication. Raman spectroscopy is extensively used for primary characterization of such samples, however, quantification of carrier concentration using the known G-2D vector analysis can pose problems when more sources of phonon renormalization are present, for example lattice deformation or disorder. In such cases, analysis of another Raman mode can provide the needed missing information. In this study, chemical vapor-deposition-grown single-layer graphene was monitored by in-situ Raman spectroelectrochemistry with the focus on the behavior of the 2D’ mode upon the application of electrochemical potential. We analyzed the changes of the Raman peak intensity, frequency and linewidth of the 2D’ mode as a function of electrode potential in detail and compared the obtained results with well-known behavior of the G and 2D modes during electrochemical doping. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2023 Electronic address https://hdl.handle.net/11104/0332528
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