Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

Fait, Jan; Varga, Marián; Hruška, Karel; Kromka, Alexander; Rezek, B.; Ondič, Lukáš

doi:https://dx.doi.org/10.1515/nanoph-2021-0369

Number of the records: 1

Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

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SYSNO ASEP	0549926
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers
Author(s)	Fait, Jan (FZU-D)_ORCID Varga, Marián (FZU-D)_{RID, ORCID} Hruška, Karel (FZU-D)_{RID, ORCID} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI} Rezek, B. (CZ) Ondič, Lukáš (FZU-D)_{RID, ORCID}
Number of authors	6
Source Title	Nanophotonics . - : Walter de Gruyter - ISSN 2192-8606 Roč. 10, č. 15 (2021), s. 3895-3905
Number of pages	11 s.
Language	eng - English
Country	DE - Germany
Keywords	leaky modes ; nanocrystalline diamond ; photonic crystal slab ; silicon vacancy ; spectral tuning
Subject RIV	BH - Optics, Masers, Lasers
OECD category	Optics (including laser optics and quantum optics)
R&D Projects	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA19-14523S GA ČR - Czech Science Foundation (CSF)
Method of publishing	Open access
Institutional support	FZU-D - RVO:68378271
UT WOS	000755720800010
EID SCOPUS	85115309578
DOI	10.1515/nanoph-2021-0369
Annotation	We demonstrate a new two-step method for fabricating diamond PhC slabs with leaky modes overlapping the emission line of the silicon vacancy (SiV) centers. In the first step, the PhC structure with leaky modes blue shifted from the SiV emission line is fabricated in a nanocrystalline diamond without SiV centers. A thin layer of SiV-rich diamond is then deposited over the PhC slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method. An intensity enhancement of the zero-phonon line of the SiV centers by a factor of nine is achieved. The color centers in the thin surface layer are beneficial for sensing applications and their properties can also be further controlled by the diamond surface chemistry. The demonstrated PhC tuning method can also be easily adapted to other optical centers and photonic structures of different types in diamond and other materials.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2022
Electronic address	http://hdl.handle.net/11104/0325809

Number of the records: 1