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Strong confinement-induced nonlinear terahertz response in semiconductor nanostructures revealed by Monte Carlo calculations
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SYSNO ASEP 0548915 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Strong confinement-induced nonlinear terahertz response in semiconductor nanostructures revealed by Monte Carlo calculations Author(s) Kuchařík, Jiří (FZU-D) ORCID
Němec, Hynek (FZU-D) RID, ORCID, SAINumber of authors 2 Article number 205426 Source Title Physical Review B. - : American Physical Society - ISSN 2469-9950
Roč. 103, č. 20 (2021)Number of pages 10 s. Language eng - English Country US - United States Keywords terahertz spectroscopy ; semiconductor nanostructures ; nonlinear optical properties Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Optics (including laser optics and quantum optics) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GX19-28375X GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000655905000005 EID SCOPUS 85107281327 DOI 10.1103/PhysRevB.103.205426 Annotation Nonlinear terahertz conductivity spectra of charges confined in semiconductor nanostructures were calculated using a semiclassical Monte Carlo method. The confinement-induced nonlinear response per charge carrier is much stronger than the intrinsic nonlinearity of common bulk semiconductors and more than 20 times stronger than in graphene, which has been considered as a material with one of the highest terahertz nonlinearities. Moderate intensities of the terahertz radiation are thus sufficient to achieve efficient frequency mixing or high-harmonics generation. Enclosing the nanostructures into metallic nanoslits concentrates the electric field into the semiconductor and thus easily provides nonlinear terahertz signal strength comparable to the linear one. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address https://doi.org/10.1103/PhysRevB.103.205426
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