Number of the records: 1  

Diamond based solution-gated transistors for biosensor use

  1. 1.
    SYSNO ASEP0546558
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleDiamond based solution-gated transistors for biosensor use
    Author(s) Procházka, Václav (FZU-D) ORCID
    Krátká, Marie (FZU-D) RID, ORCID
    Izsák, Tibor (FZU-D) ORCID
    Rezek, B. (CZ)
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Number of authors5
    Source TitleProceedings of ADEPT - ADEPT 2021. - Žilina : University of Žilina, 2021 / Jandura D. ; Maniaková P. ; Lettrichová I. ; Kováč, jr. J. - ISBN 978-80-554-1806-3
    Pagess. 1-4
    Number of pages4 s.
    Publication formOnline - E
    Action9th International Conference on Advances in Electronic and Photonic Technologies - ADEPT 2021
    Event date20.09.2021 - 23.09.2021
    VEvent locationPodbanské
    CountrySK - Slovakia
    Event typeEUR
    Languageeng - English
    CountrySK - Slovakia
    Keywordsdiamond ; surface conductivity ; solution-gated field-effect transistors
    Subject RIVJP - Industrial Processing
    OECD categoryMaterials engineering
    R&D ProjectsEF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271
    AnnotationBioelectronics and biosensors play a crucial role in modern society. The need for selectivity, sensitivity, fast and reliable response raises interest in the use of novel materials. Increased attention has been thus focused on carbon-based materials, namely diamond and graphene, which can provide many advantageous properties. In this paper, we focus on solution-gated field-effect transistors employing the hydrogen-terminated diamond surface as the functional layer for label-free monitoring proteins or cells in real-time. The hydrogen termination of diamond induces a sub-surface two-dimensional p-type channel sensitive to the surrounding conditions (gas molecules, biomolecules, or cells). Here, selected technological approaches in the fabrication of diamond-based solution-gated transistors are discussed.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2022
Number of the records: 1  

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