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Diamond based solution-gated transistors for biosensor use
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SYSNO ASEP 0546558 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Diamond based solution-gated transistors for biosensor use Author(s) Procházka, Václav (FZU-D) ORCID
Krátká, Marie (FZU-D) RID, ORCID
Izsák, Tibor (FZU-D) ORCID
Rezek, B. (CZ)
Kromka, Alexander (FZU-D) RID, ORCID, SAINumber of authors 5 Source Title Proceedings of ADEPT - ADEPT 2021. - Žilina : University of Žilina, 2021 / Jandura D. ; Maniaková P. ; Lettrichová I. ; Kováč, jr. J. - ISBN 978-80-554-1806-3 Pages s. 1-4 Number of pages 4 s. Publication form Online - E Action 9th International Conference on Advances in Electronic and Photonic Technologies - ADEPT 2021 Event date 20.09.2021 - 23.09.2021 VEvent location Podbanské Country SK - Slovakia Event type EUR Language eng - English Country SK - Slovakia Keywords diamond ; surface conductivity ; solution-gated field-effect transistors Subject RIV JP - Industrial Processing OECD category Materials engineering R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation Bioelectronics and biosensors play a crucial role in modern society. The need for selectivity, sensitivity, fast and reliable response raises interest in the use of novel materials. Increased attention has been thus focused on carbon-based materials, namely diamond and graphene, which can provide many advantageous properties. In this paper, we focus on solution-gated field-effect transistors employing the hydrogen-terminated diamond surface as the functional layer for label-free monitoring proteins or cells in real-time. The hydrogen termination of diamond induces a sub-surface two-dimensional p-type channel sensitive to the surrounding conditions (gas molecules, biomolecules, or cells). Here, selected technological approaches in the fabrication of diamond-based solution-gated transistors are discussed. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022
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