Number of the records: 1  

Effect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride

  1. 1.
    SYSNO ASEP0545328
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleEffect of Auger recombination on transient optical properties in XUV and soft X-ray irradiated silicon nitride
    Author(s) Tkachenko, V. (DE)
    Lipp, V. (DE)
    Buescher, M. (DE)
    Capotondi, F. (IT)
    Hoeppner, H. (DE)
    Medvedev, Nikita (FZU-D) ORCID, RID
    Pedersoli, E. (IT)
    Prandolini, M.J. (DE)
    Rossi, G.M. (DE)
    Tavella, F. (US)
    Toleikis, S. (DE)
    Windeler, M. (US)
    Ziaja, B. (PL)
    Teubner, U. (DE)
    Number of authors14
    Article number5203
    Source TitleScientific Reports. - : Nature Publishing Group - ISSN 2045-2322
    Roč. 11, č. 1 (2021)
    Number of pages10 s.
    Languageeng - English
    CountryDE - Germany
    Keywordstemporal diagnostics of FEL pulses ; optical properties of silicon nitride irradiated by XUV and soft X-ray
    Subject RIVBH - Optics, Masers, Lasers
    OECD categoryFluids and plasma physics (including surface physics)
    R&D ProjectsLTT17015 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000626140000031
    EID SCOPUS85102084539
    DOI10.1038/s41598-021-84677-w
    AnnotationSpatially encoded measurements of transient optical transmissivity became a standard tool for temporal diagnostics of free-electron-laser (FEL) pulses, as well as for the arrival time measurements in X-ray pump and optical probe experiments. The modern experimental techniques can measure changes in optical coefficients with a temporal resolution better than 10 fs. Carrier transport within the material and out of its significantly decrease the number of carriers. This would strongly affect the transient optical properties, making the diagnostic measurement inaccurate. We analyze in detail the effects of those processes on the optical properties of XUV and soft X-ray irradiated Si3N4, on sub-picosecond timescales. Theoretical predictions are compared with the published results of two experiments at FERMI and LCLS facilities, and with our own recent measurement.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2022
    Electronic addresshttp://hdl.handle.net/11104/0322052
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.