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Six MeV proton acceleration from plasma generated by high-intensity laser using advanced thin polyethylene targets

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    SYSNO ASEP0543958
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleSix MeV proton acceleration from plasma generated by high-intensity laser using advanced thin polyethylene targets
    Author(s) Torrisi, L. (IT)
    Cutroneo, Mariapompea (UJF-V) ORCID, RID, SAI
    Torrisi, A. (IT)
    Number of authors3
    Article number202100024
    Source TitleContributions to Plasma Physics. - : Wiley - ISSN 0863-1042
    Roč. 61, č. 8 (2021)
    Number of pages14 s.
    Publication formPrint - P
    Languageeng - English
    CountryDE - Germany
    Keywordsion acceleration ; laser-plasma ; polyethylene ; SiC detector TNSA
    Subject RIVBG - Nuclear, Atomic and Molecular Physics, Colliders
    OECD categoryAtomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
    Method of publishingLimited access
    Institutional supportUJF-V - RVO:61389005
    UT WOS000670173500001
    EID SCOPUS85109172121
    DOI10.1002/ctpp.202100024
    AnnotationProton acceleration can be induced by non-equilibrium plasma developed by high-intensity laser pulses, at 10(16) W/cm(2), irradiating different types of thin polyethylene targets. The process of proton acceleration and directive yield emission was investigated, optimizing the laser parameters, the irradiation conditions, and the target properties. The use of 600 J pulse energy, a laser focalization inducing self-focusing effects and advanced targets with embedded nanoparticles and optimal thicknesses, has permitted to accelerate forward protons up to the energies of about 6 MeV and amount of the order of 10(15) H+/pulse. High proton energy is obtained using thin foils enriched with gold nanoparticles, whereas high proton yield is obtained using targets with a thickness of about 10 mu m. The plasma diagnostics using SiC semiconductor detectors in time-of-flight configuration was fundamental to monitor the optimal conditions to improve the plasma processes concerning the ion acceleration and the X-ray and relativistic electron emission.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing2022
    Electronic addresshttps://doi.org/10.1002/ctpp.202100024
Number of the records: 1  

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