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Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr.sup.3+./sup. doped Gd.sub.2./sub.O.sub.3./sub.-Ga.sub.2./sub.O.sub.3./sub. binary system
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SYSNO ASEP 0543043 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr3+ doped Gd2O3-Ga2O3 binary system Author(s) Lančok, Ján (FZU-D) RID, ORCID
Novotný, Michal (FZU-D) RID, ORCID, SAI
Volfová, Lenka (FZU-D) ORCID
More Chevalier, Joris (FZU-D) ORCID
Pereira, A. (FR)Number of authors 5 Article number 043403 Source Title Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films. - : AIP Publishing - ISSN 0734-2101
Roč. 39, č. 4 (2021)Number of pages 9 s. Language eng - English Country US - United States Keywords wave-guides ; optical-properties ; thin-films ; luminescence properties ; structural-properties ; growth ; deposition ; Sm2O3-Ga2O3 ; PLD Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA18-17834S GA ČR - Czech Science Foundation (CSF) EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000649466000003 EID SCOPUS 85105883849 DOI 10.1116/6.0001001 Annotation Three different compounds, cubic Gd2O3, orthorhombic GdGaO3, and cubic Gd3Ga5O12 doped with Pr3+ ions were fabricated as waveguiding films by pulsed laser deposition from the same target material, Pr3+ doped Gd3Ga5O12 (Pr:GGG) single crystal. All of them were deposited at the same substrate temperature of 800 °C. The different crystalline phases obtained depend only on the ambient oxygen pressure and the substrate type (YAG or YAP single crystals). The structural and texture properties of the films were analyzed by x-ray diffraction. Pr3+ fluorescence properties were found to be similar to those of the bulk crystals. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address https://doi.org/10.1116/6.0001001
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