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Effect of oxygen pressure on stoichiometric transfer in laser ablation of Pr.sup.3+./sup. doped Gd.sub.2./sub.O.sub.3./sub.-Ga.sub.2./sub.O.sub.3./sub. binary system

  1. 1.
    SYSNO ASEP0543043
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleEffect of oxygen pressure on stoichiometric transfer in laser ablation of Pr3+ doped Gd2O3-Ga2O3 binary system
    Author(s) Lančok, Ján (FZU-D) RID, ORCID
    Novotný, Michal (FZU-D) RID, ORCID, SAI
    Volfová, Lenka (FZU-D) ORCID
    More Chevalier, Joris (FZU-D) ORCID
    Pereira, A. (FR)
    Number of authors5
    Article number043403
    Source TitleJournal of Vacuum Science & Technology A : Vacuum, Surfaces and Films. - : AIP Publishing - ISSN 0734-2101
    Roč. 39, č. 4 (2021)
    Number of pages9 s.
    Languageeng - English
    CountryUS - United States
    Keywordswave-guides ; optical-properties ; thin-films ; luminescence properties ; structural-properties ; growth ; deposition ; Sm2O3-Ga2O3 ; PLD
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA18-17834S GA ČR - Czech Science Foundation (CSF)
    EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000649466000003
    EID SCOPUS85105883849
    DOI10.1116/6.0001001
    AnnotationThree different compounds, cubic Gd2O3, orthorhombic GdGaO3, and cubic Gd3Ga5O12 doped with Pr3+ ions were fabricated as waveguiding films by pulsed laser deposition from the same target material, Pr3+ doped Gd3Ga5O12 (Pr:GGG) single crystal. All of them were deposited at the same substrate temperature of 800 °C. The different crystalline phases obtained depend only on the ambient oxygen pressure and the substrate type (YAG or YAP single crystals). The structural and texture properties of the films were analyzed by x-ray diffraction. Pr3+ fluorescence properties were found to be similar to those of the bulk crystals.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2022
    Electronic addresshttps://doi.org/10.1116/6.0001001
Number of the records: 1  

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