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Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
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SYSNO ASEP 0542725 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells Author(s) Hájek, František (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Dominec, Filip (FZU-D) RID, ORCID
Horešovský, Robert (FZU-D)
Kuldová, Karla (FZU-D) RID, ORCIDNumber of authors 8 Article number 118127 Source Title Journal of Luminescence. - : Elsevier - ISSN 0022-2313
Roč. 236, Aug (2021)Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords nitrides ; impurity ; SIMS ; InGaN/GaN Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) FW03010298 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) Method of publishing Open access with time embargo (31.08.2023) Institutional support FZU-D - RVO:68378271 UT WOS 000663095100002 EID SCOPUS 85104287517 DOI 10.1016/j.jlumin.2021.118127 Annotation Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is based on difference among the formation energies of acceptors in the InGaN quantum wells. A nice correlation of the model and experimental data helps to reveal origin of Zn impurity in InGaN quantum wells. Proposed methodology can be applied to different acceptor-like defects and shine light the upon enigma of high defect concentration in the bottom quantum wells grown atop the n-type buffer layer. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address http://hdl.handle.net/11104/0320090
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