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Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

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    SYSNO ASEP0541992
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleDefect structures in (001) zincblende GaN/3C-SiC nucleation layers
    Author(s) Vacek, Petr (UFM-A) ORCID, RID
    Frentrup, M. (GB)
    Lee, L. Y. (GB)
    Massabuau, Fabien C. P. (GB)
    Kappers, Menno J. (GB)
    Wallis, David J. (GB)
    Gröger, Roman (UFM-A) RID, ORCID
    Oliver, Rachel A. (GB)
    Number of authors8
    Article number155306
    Source TitleJournal of Applied Physics - ISSN 0021-8979
    Roč. 129, č. 15 (2021)
    Number of pages11 s.
    Languageeng - English
    CountryUS - United States
    Keywordsstacking faults ; gallium nitride ; transmission electron microscopy
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsEF16_027/0008056 GA MŠk - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportUFM-A - RVO:68081723
    UT WOS000641873500002
    EID SCOPUS85104562025
    DOI10.1063/5.0036366
    AnnotationThe defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.
    WorkplaceInstitute of Physics of Materials
    ContactYvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485
    Year of Publishing2022
    Electronic addresshttps://aip.scitation.org/doi/10.1063/5.0036366
Number of the records: 1