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Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
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SYSNO ASEP 0541992 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Defect structures in (001) zincblende GaN/3C-SiC nucleation layers Author(s) Vacek, Petr (UFM-A) ORCID, RID
Frentrup, M. (GB)
Lee, L. Y. (GB)
Massabuau, Fabien C. P. (GB)
Kappers, Menno J. (GB)
Wallis, David J. (GB)
Gröger, Roman (UFM-A) RID, ORCID
Oliver, Rachel A. (GB)Number of authors 8 Article number 155306 Source Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 129, č. 15 (2021)Number of pages 11 s. Language eng - English Country US - United States Keywords stacking faults ; gallium nitride ; transmission electron microscopy Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_027/0008056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support UFM-A - RVO:68081723 UT WOS 000641873500002 EID SCOPUS 85104562025 DOI 10.1063/5.0036366 Annotation The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers. Workplace Institute of Physics of Materials Contact Yvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485 Year of Publishing 2022 Electronic address https://aip.scitation.org/doi/10.1063/5.0036366
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