Number of the records: 1
Properties of boron-doped (113) oriented homoepitaxial diamond layers
- 1.
SYSNO ASEP 0541744 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Properties of boron-doped (113) oriented homoepitaxial diamond layers Author(s) Mortet, Vincent (FZU-D) RID, ORCID
Taylor, Andrew (FZU-D) RID, ORCID
Lambert, Nicolas (FZU-D) ORCID, RID
Gedeonová, Zuzana (FZU-D) ORCID
Fekete, Ladislav (FZU-D) RID, ORCID
Lorinčík, J. (CZ)
Klimša, Ladislav (FZU-D) ORCID
Kopeček, Jaromír (FZU-D) RID, ORCID
Hubík, Pavel (FZU-D) RID, ORCID
Šobáň, Zbyněk (FZU-D) RID, ORCID
Laposa, A. (CZ)
Davydova, Marina (FZU-D) RID, ORCID
Voves, J. (CZ)
Pošta, A. (CZ)
Povolný, V. (CZ)
Hazdra, P. (CZ)Number of authors 16 Article number 108223 Source Title Diamond and Related Materials. - : Elsevier - ISSN 0925-9635
Roč. 111, Jan (2021)Number of pages 6 s. Language eng - English Country CH - Switzerland Keywords boron-doped diamond ; electrical properties ; (113) oriented epitaxial diamond Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA20-11140S GA ČR - Czech Science Foundation (CSF) GA17-05259S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000612811800009 EID SCOPUS 85097893923 DOI 10.1016/j.diamond.2020.108223 Annotation Recent works indicate that boron-doped and phosphorous-doped diamond can be grown on atomically stepped (113) surfaces (A. Tallaire et al., 2016, M.-A. Pinault-Thaury et al., 2019), however the electrical properties of these layers have not been studied in detail. In this work, we report on structural and electrical properties of boron-doped epitaxial diamond layers grown on (113) substrates. Properties of the diamond layers have been investigated by means of scanning electron microscopy, atomic force microscopy, Hall effect, secondary ion mass spectrometry and Raman spectroscopy. Our results show that boron-doped diamond layers can be grown on (113) substrates at high deposition rates with atomically flat surfaces, excellent electrical properties and high boron incorporation efficiency. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address https://doi.org/10.1016/j.diamond.2020.108223
Number of the records: 1