Number of the records: 1  

Photoluminescence in wide band gap nanocrystals

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    SYSNO ASEP0540846
    Document TypeA - Abstract
    R&D Document TypeO - Ostatní
    TitlePhotoluminescence in wide band gap nanocrystals
    Author(s) Dragounová, Kateřina (FZU-D) ORCID
    Ižák, Tibor (FZU-D) RID
    Potocký, Štěpán (FZU-D) RID, ORCID
    Potůček, Zdeněk (FZU-D) RID, ORCID
    Bryknar, Z. (CZ)
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Remeš, Zdeněk (FZU-D) RID, ORCID
    Number of authors7
    Source TitleProceedings of Abstracts. - Ostrava : Tanger Ltd., 2018 / Shrbená J. - ISBN 978-80-87294-85-7
    S. 67-67
    Number of pages1 s.
    Publication formOnline - E
    ActionNANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./
    Event date17.10.2018 - 19.10.2018
    VEvent locationBrno
    CountryCZ - Czech Republic
    Event typeEUR
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordspholuminescence ; diamond
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGC16-10429J GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    AnnotationThe diamond films were grown by microwave plasma enhanced CVD system. Temperature dependent steady-state photoluminescence (PL) of Si-V centres was measured within the range 11-300 K. PL measurements are correlated with process parameters. It was found that quartz or Si as substrates and substrate temperature of 800°C were the optimal parameters, at which the highest photoluminescence activity of Si-V centre was measured. For all the samples, the temperature dependent PL measurements exhibited the blue shift in zero-phonon line (ZPL) position for lower temperatures and for selected samples, ZPL narrowing were observed. This effect will be discussed from point of temperature behaviour of Si-V electronic transition energy. Temperature development of PL integral intensity was discussed by means of Boltzmann activation process. It suggests the contribution of other centres in luminescence process.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2021
Number of the records: 1  

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