ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

Stuchlíková, The-Ha; Čermák, Jan; Babčenko, Oleg; Remeš, Zdeněk; Kromka, Alexander; Stuchlík, Jiří

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ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C

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SYSNO ASEP	0540385
Document Type	A - Abstract
R&D Document Type	O - Ostatní
Title	ZnO as transparent and conductive oxide versus diamond thin films for PIN diodes based on a-SiC:H deposited at temperatures between 350–450 °C
Author(s)	Stuchlíková, The-Ha (FZU-D)_{RID, ORCID} Čermák, Jan (FZU-D)_{RID, SAI, ORCID} Babčenko, Oleg (FZU-D)_ORCID Remeš, Zdeněk (FZU-D)_{RID, ORCID} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI} Stuchlík, Jiří (FZU-D)_{RID, ORCID}
Number of authors	6
Source Title	Book of Abstracts of the 18th International Conference on Thin Films & 18th Joint Vacuum Conference. - Budapest, 2020 / Pécz B. S. 149-149
Number of pages	1 s.
Publication form	Online - E
Action	18th International Conference on Thin Films & 18th Joint Vacuum Conference
Event date	22.11.2020 - 26.11.2020
VEvent location	Budapest
Country	HU - Hungary
Event type	EUR
Language	eng - English
Country	HU - Hungary
Keywords	ZnO ; diamond thin films ; a-SiC:H ; thin film diodes
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GC19-02858J GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
Annotation	In this study, we tested temperature stability of aluminum doped ZnO thin films and compare them with nano-crystalline diamond (NCD). The NCD films were deposited at temperature 450 C. Both types of thin films evince high transmission and a good scattering of light via their high roughness. The surface morphology of the layers before and after annealing in high vacuum in the range from 350 to 450 C were characterized by scanning electron microscopy and atomic force microscopy. As well as the changes of optical transmissions and electrical conductivities were studied. Finally, a-SiC:H diode structures were fabricated on the annealed films and characterized by I-V measurements.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2021

Number of the records: 1