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Integration of nanometer-thick 1T-TaS.sub.2./sub. films with silicon for an optically driven wide-band terahertz modulator
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SYSNO ASEP 0539196 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Integration of nanometer-thick 1T-TaS2 films with silicon for an optically driven wide-band terahertz modulator Author(s) Jakhar, A. (IN)
Kumar, Prabhat (FZU-D) ORCID
Husain, S. (SE)
Dhyani, V. (IN)
Das, S. (IN)Number of authors 5 Source Title ACS Applied Nano Materials. - : American Chemical Society - ISSN 2574-0970
Roč. 3, č. 11 (2020), s. 10767-10777Number of pages 10 s. Language eng - English Country US - United States Keywords terahertz ; modulator ; conductivity ; modulation depth ; transmittance Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000595546500024 EID SCOPUS 85096133075 DOI 10.1021/acsanm.0c02076 Annotation The amplitude of terahertz (THz) waves is modulated optically by a pumping laser source, and the effect of optical power on modulation depth is systematically investigated in this work. The reported THz modulator is based on a conducting transition metal dichalcogenide (TMD), that is, a nanometer-thick thin film of tantalum disulfide (TaS2) grown on a high-resistivity silicon (Si) substrate. The Raman spectrum confirms the formation of the 1T phase of TaS2. Modulation depths of 69.3 and 46.8% have been achieved at 0.1 THz and 0.9 THz frequency, respectively, under a low pumping power of 1 W/cm2. A constant higher modulation depth in the wide frequency range reveals the broadband response of the THz modulator. Under the same conditions, the modulation increased twice as compared to bare Si after annealing at 300 °C in the presence of air. Furthermore, numerical analysis based on the finite-difference time domain shows that a greater number of photogenerated charge carriers are present near the interface of Si and TaS2, which leads to enhancement in modulation. The utilization of 1T-TaS2 imparts potential to these TMDs in the wide THz frequency range and unfolds the possibilities for their use in THz imaging, wireless communication, and detection processes.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address https://doi.org/10.1021/acsanm.0c02076
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