Number of the records: 1  

In situ anion-doped epitaxial strontium titanate films

  1. 1.
    SYSNO ASEP0538768
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleIn situ anion-doped epitaxial strontium titanate films
    Author(s) Tyunina, Marina (FZU-D) ORCID
    Pacherová, Oliva (FZU-D) RID, ORCID
    Nepomniashchaia, Natalia (FZU-D) ORCID
    Vetokhina, Volha (FZU-D) ORCID
    Cichoň, Stanislav (FZU-D) RID, ORCID
    Kocourek, Tomáš (FZU-D) RID, ORCID, SAI
    Dejneka, Alexandr (FZU-D) RID, ORCID
    Number of authors7
    Source TitlePhysical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076
    Roč. 22, č. 42 (2020), s. 24796-24800
    Number of pages5 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordsanion-doped ; in - situ ; epitaxial ; strontium titanate films
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsEF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GA19-09671S GA ČR - Czech Science Foundation (CSF)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000585861500060
    EID SCOPUS85095799707
    DOI10.1039/d0cp03644g
    AnnotationMisfit strains arising from a film–substrate mismatch can induce novel phases and properties in the epitaxial films of perovskite oxides. Here we employ yet another effect, namely, strain-assisted formation of oxygen vacancies. We demonstrate the misfit-promoted presence of oxygen vacancies and related substitutional incorporation of anion dopants in the epitaxial films of archetypal perovskite oxide SrTiO3. Both the oxygen vacancies and hydrogen or nitrogen dopants are introduced in situ during the pulsed-laser deposition of the films using compressive substrates. The films exhibit peculiar chemical expansion and optical properties, which are consistent with substitutional anion doping.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2021
    Electronic addresshttp://hdl.handle.net/11104/0316500
Number of the records: 1  

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