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Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
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SYSNO ASEP 0538509 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry Author(s) Richter, Steffen (FZU-D) ORCID
Herrfurth, O. (DE)
Espinoza Herrera, Shirly J. (FZU-D) ORCID
Rebarz, Mateusz (FZU-D) ORCID
Kloz, Miroslav (FZU-D) ORCID
Leveillee, J.A. (US)
Schleife, A. (US)
Zollner, S. (US)
Grundmann, M. (DE)
Andreasson, Jakob (FZU-D) ORCID
Schmidt-Grund, R. (DE)Number of authors 11 Article number 083066 Source Title New Journal of Physics. - : Institute of Physics Publishing - ISSN 1367-2630
Roč. 22, č. 8 (2020), s. 1-15Number of pages 15 s. Language eng - English Country GB - United Kingdom Keywords ZnO ; time-resolved ellipsometry ; ultrafast dynamics ; thin oxides ; oxide ; semiconductor ; dielectric function Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000789 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF15_003/0000447 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LQ1606 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Research Infrastructure ELI Beamlines III - 90141 - Fyzikální ústav AV ČR, v. v. i. Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000565729800001 EID SCOPUS 85090423186 DOI 10.1088/1367-2630/aba7f3 Annotation Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excitons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry, we can directly and unambiguously obtain the real and imaginary part of the transient dielectric function which we compare with first-principles simulations. We find interband and excitonic absorption partially blocked and screened by the photo-excited electron occupation of the conduction band and hole occupation of the valence band (absorption bleaching). Exciton absorption turns spectrally narrower upon pumping and sustains the Mott transition, indicating Mahan excitons. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address http://hdl.handle.net/11104/0316308
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