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TID and SEU testing of the novel X-CHIP-03 monolithic pixel detector
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SYSNO ASEP 0538009 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title TID and SEU testing of the novel X-CHIP-03 monolithic pixel detector Author(s) Marčišovská, M. (CZ)
Dudas, D. (CZ)
Havránek, M. (CZ)
Kabátová, A. (CZ)
Kafka, V. (CZ)
Kostina, A. (CZ)
Macková, A. (CZ)
Marcisovský, M. (CZ)
Mitrofanov, S. V. (RU)
Popule, Jiří (FZU-D) RID, ORCID
Romanenko, Oleksandr V. (UJF-V) ORCID, SAI
Tomášek, L. (CZ)
Vrba, V. (CZ)Number of authors 13 Article number C01043 Source Title Journal of Instrumentation. - : Institute of Physics Publishing - ISSN 1748-0221
Roč. 15, č. 1 (2020), s. 1-11Number of pages 11 s. Language eng - English Country GB - United Kingdom Keywords radiation damage to detector materials (solid state) ; radiation damage to electronic components ; radiation-hard detectors ; radiation-hard electronics Subject RIV BF - Elementary Particles and High Energy Physics OECD category Particles and field physics Subject RIV - cooperation Nuclear Physics Institute - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 ; UJF-V - RVO:61389005 UT WOS 000525449100043 EID SCOPUS 85081644298 DOI 10.1088/1748-0221/15/01/C01043 Annotation We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in a 180 nm SOI technology. The SEU cross section of the custom D flip-flops in the X-CHIP-03 ASIC has been evaluated using accelerated ions with LET ranging from 0.45 to 69 MeVċcm2ċmg−1. The global TID response of the X-CHIP-03 has been evaluated at a dose rate of 16.2 Gyċmin−1. The direct I-V measurements of transistor properties were made under identical radiation conditions using the predecessor X-CHIP-02 ASIC manufactured in the same technology, which contains the transistor testing matrices for TID measurements.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address https://doi.org/10.1088/1748-0221/15/01/C01043
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