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Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier
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SYSNO ASEP 0536232 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier Author(s) Tulić, S. (AT)
Waitz, T. (AT)
Romanyuk, Olexandr (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Čaplovičová, M. (SK)
Habler, G. (AT)
Vretenár, V. (SK)
Kotlár, M. (SK)
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Rezek, Bohuslav (FZU-D) RID, ORCID
Skákalová, V. (AT)Number of authors 11 Source Title RSC Advances. - : Royal Society of Chemistry
Roč. 10, č. 14 (2020), s. 8224-8232Number of pages 9 s. Language eng - English Country GB - United Kingdom Keywords oxide barrier ; Si substrates ; nanocrystalline diamond Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000521329900027 EID SCOPUS 85081115845 DOI 10.1039/d0ra00809e Annotation Manocrystalline diamond (NCD)films grown on Si substrates by microwave plasma enhanced chemicalvapor deposition (MWPECVD) were subjected to Ni-mediated graphitization to cover them witha conductive layer. Results of transmission electron microscopy including electron energy-lossspectroscopy of cross-sectional samples demonstrate that the oxide layer on Si substrates ( 5 nm nativeSiO2) has been damaged by microwave plasma during the early stage of NCD growth. During the heattreatment for graphitizing the NCD layer, the permeability or absence of the oxide barrier allow Ninanoparticles to diffuse into the Si substrate and cause additional solid-state reactions producingpyramidal crystals of NiSi2and SiC nanocrystals. The latter are found impinged into the NiSi2pyramidsbut only when the interfacial oxide layer is absent, replaced by amorphous SiC. The complex phasemorphology of the samples is also reflected in the temperature dependence of electrical conductivity,where multiple pathways of the electronic transport dominate in different temperature regions. Wepresent models explaining the observed cascade of solid-state reactions and resulting electronictransport properties of such heterostructures. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address http://hdl.handle.net/11104/0314049
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