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A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures
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SYSNO ASEP 0532847 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hájek, František (FZU-D) ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Slavická Zíková, Markéta (FZU-D)
Hubáček, Tomáš (FZU-D) ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Vaněk, Tomáš (FZU-D) ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Čížek, J. (CZ)
Liedke, M.O. (DE)
Butterling, M. (DE)
Wagner, A. (DE)Number of authors 13 Article number 125579 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 536, Apr (2020), s. 1-6Number of pages 6 s. Language eng - English Country NL - Netherlands Keywords quantum wells ; defects ; impurities ; metalorganic vapor phase epitaxy ; nitrides Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) TH02010580 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000520838100001 EID SCOPUS 85080922153 DOI 10.1016/j.jcrysgro.2020.125579 Annotation This work suggests new alternative explanation why a single InGaN QW or the deepest QWs in the MQW structures suffer with a high non-radiative recombination rate. According to SIMS results, positron annihilation spectroscopy and photoluminescence measurements we suggest that vacancy of Ga in complex with hydrogen atoms can play a dominant role in non-radiative Shockley-Read-Hall recombination of the deepest QWs in InGaN/GaN MQW structures. Vacancy of Ga originate dominantly in GaN buffer layers grown at higher temperatures in H2 atmosphere and are transported to the InGaN/GaN MQW region by diffusion, where they are very effectively trapped in InGaN layers and form complex defects with hydrogen atoms during epitaxy of InGaN layers. Trapping of Ga vacancies is another suggested mechanism explaining why the widely used In containing prelayers help to increase the luminescence efficiency of the InGaN/GaN MQW active region grown above them.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address https://doi.org/10.1016/j.jcrysgro.2020.125579
Number of the records: 1