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Low-energy electron microscopy of graphene outside UHV: electron-induced removal of PMMA residues used for graphene transfer

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    SYSNO ASEP0525529
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleLow-energy electron microscopy of graphene outside UHV: electron-induced removal of PMMA residues used for graphene transfer
    Author(s) Materna Mikmeková, Eliška (UPT-D) ORCID, RID, SAI
    Müllerová, Ilona (UPT-D) RID, SAI, ORCID
    Frank, Luděk (UPT-D) RID, SAI, ORCID
    Paták, Aleš (UPT-D) RID, ORCID, SAI
    Polčák, J. (CZ)
    Sluyterman, S. (NL)
    Lejeune, M. (FR)
    Konvalina, Ivo (UPT-D) RID, ORCID, SAI
    Number of authors8
    Article number146873
    Source TitleJournal of Electron Spectroscopy and Related Phenomena. - : Elsevier - ISSN 0368-2048
    Roč. 241, MAY (2020)
    Number of pages7 s.
    Publication formPrint - P
    Languageeng - English
    CountryNL - Netherlands
    Keywordsgraphene ; PMMA ; slow electron treatment ; XPS ; Raman spectroscopy
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    OECD categoryElectrical and electronic engineering
    R&D ProjectsTE01020118 GA TA ČR - Technology Agency of the Czech Republic (TA ČR)
    LO1212 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportUPT-D - RVO:68081731
    UT WOS000540723700016
    EID SCOPUS85069968563
    DOI10.1016/j.elspec.2019.06.005
    AnnotationTwo-dimensional materials, such as graphene, are usually prepared by chemical vapor deposition (CVD) on selected substrates, and their transfer is completed with a supporting layer, mostly polymethyl methacrylate (PMMA). Indeed, the PMMA has to be removed precisely to obtain the predicted superior properties of graphene after the transfer process. We demonstrate a new and effective technique to achieve a polymer-free CVD graphene by utilizing low-energy electron irradiation in a scanning low-energy electron microscope (SLEEM). The influence of electron-landing energy on cleaning efficiency and graphene quality was observed by SLEEM, Raman spectroscopy (the presence of disorder D peak) and XPS (the deconvolution of the C 1s peak). After removing the absorbed molecules and polymer residues from the graphene surface with slow electrons, the individual graphene layers can also be distinguished outside ultra-high vacuum conditions in both the reflected and transmitted modes of a scanning low-energy (transmission) electron microscope.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2021
    Electronic addresshttps://www.sciencedirect.com/science/article/pii/S0368204818302068
Number of the records: 1  

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