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Functional nano-structuring of thin silicon nitride membranes
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SYSNO ASEP 0525191 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Functional nano-structuring of thin silicon nitride membranes Author(s) Matějka, Milan (UPT-D) RID, ORCID, SAI
Krátký, Stanislav (UPT-D) RID, ORCID, SAI
Řiháček, Tomáš (UPT-D) RID, ORCID
Knápek, Alexandr (UPT-D) RID, ORCID, SAI
Kolařík, Vladimír (UPT-D) RID, ORCID, SAINumber of authors 5 Source Title Journal of Electrical Engineering - Elektrotechnický časopis. - : Slovenská technická univerzita v Bratislave - ISSN 1335-3632
Roč. 71, č. 2 (2020), s. 127-130Number of pages 4 s. Publication form Online - E Language eng - English Country SK - Slovakia Keywords membrane ; nano optical device ; electron optics ; electron beam lithography ; silicon nitride ; reactive ion etching ; silicon etching ; microfabrication Subject RIV JJ - Other Materials OECD category Nano-processes (applications on nano-scale) R&D Projects TN01000008 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support UPT-D - RVO:68081731 UT WOS 000536287900009 EID SCOPUS 85085758550 DOI 10.2478/jee-2020-0019 Annotation The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2021 Electronic address https://content.sciendo.com/view/journals/jee/71/2/article-p127.xml
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