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Acquisition of the dopant contrast in semiconductors with slow electrons

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    SYSNO ASEP0525062
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleAcquisition of the dopant contrast in semiconductors with slow electrons
    Author(s) Frank, Luděk (UPT-D) RID, SAI, ORCID
    Hovorka, Miloš (UPT-D)
    El Gomati, M. M. (GB)
    Müllerová, Ilona (UPT-D) RID, SAI, ORCID
    Mika, Filip (UPT-D) RID, SAI, ORCID
    Mikmeková, Eliška (UPT-D) RID
    Number of authors6
    Article number146836
    Source TitleJournal of Electron Spectroscopy and Related Phenomena. - : Elsevier - ISSN 0368-2048
    Roč. 241, MAY (2020)
    Number of pages10 s.
    Publication formPrint - P
    Languageeng - English
    CountryNL - Netherlands
    Keywordssemiconductors ; dopant contrast ; low energy SEM ; PEEM ; mirror electron microscopy ; surface treatments
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    OECD categoryElectrical and electronic engineering
    R&D ProjectsTE01020118 GA TA ČR - Technology Agency of the Czech Republic (TA ČR)
    LO1212 GA MŠk - Ministry of Education, Youth and Sports (MEYS)
    ED0017/01/01 GA MŠk - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportUPT-D - RVO:68081731
    UT WOS000540723700005
    EID SCOPUS85063225896
    DOI10.1016/j.elspec.2019.03.004
    AnnotationMethods available for the mapping of dopants in silicon-based semiconductor structures with p-type as well as n-type doped patterns using low and very-low-energy electrons are reviewed together with the results of demonstration experiments.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2021
    Electronic addresshttps://www.sciencedirect.com/science/article/pii/S036820481830135X
Number of the records: 1