Number of the records: 1

Acquisition of the dopant contrast in semiconductors with slow electrons

SYSNO ASEP	0525062
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Acquisition of the dopant contrast in semiconductors with slow electrons
Author(s)	Frank, Luděk (UPT-D)_{RID, SAI, ORCID} Hovorka, Miloš (UPT-D) El Gomati, M. M. (GB) Müllerová, Ilona (UPT-D)_{RID, SAI, ORCID} Mika, Filip (UPT-D)_{RID, SAI, ORCID} Mikmeková, Eliška (UPT-D)_RID
Number of authors	6
Article number	146836
Source Title	Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier - ISSN 0368-2048 Roč. 241, MAY (2020)
Number of pages	10 s.
Publication form	Print - P
Language	eng - English
Country	NL - Netherlands
Keywords	semiconductors ; dopant contrast ; low energy SEM ; PEEM ; mirror electron microscopy ; surface treatments
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
OECD category	Electrical and electronic engineering
R&D Projects	TE01020118 GA TA ČR - Technology Agency of the Czech Republic (TA ČR)
	LO1212 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Method of publishing	Open access
Institutional support	UPT-D - RVO:68081731
UT WOS	000540723700005
EID SCOPUS	85063225896
DOI	10.1016/j.elspec.2019.03.004
Annotation	Methods available for the mapping of dopants in silicon-based semiconductor structures with p-type as well as n-type doped patterns using low and very-low-energy electrons are reviewed together with the results of demonstration experiments.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2021
Electronic address	https://www.sciencedirect.com/science/article/pii/S036820481830135X

Number of the records: 1