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Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions

SYSNO ASEP	0524526
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Ion channelling effect and damage accumulation in yttria-stabilized zirconia implanted with Ag ions
Author(s)	Mikšová, Romana (UJF-V)_{RID, ORCID, SAI} Malinský, Petr (UJF-V)_{RID, ORCID, SAI} Harcuba, P. (CZ) Veselý, J. (CZ) Holý, V. (CZ) Kentsch, U. (DE) Macková, Anna (UJF-V)_{RID, ORCID, SAI}
Number of authors	7
Source Title	Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X Roč. 474, č. 7 (2020), s. 29-34
Number of pages	6 s.
Publication form	Print - P
Language	eng - English
Country	NL - Netherlands
Keywords	ion-irradiation of crystals ; Yttria-stabilized zirconia ; RBS-channeling ; Ag particles
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
OECD category	Nuclear related engineering
R&D Projects	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA18-03346S GA ČR - Czech Science Foundation (CSF)
	LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Method of publishing	Limited access
Institutional support	UJF-V - RVO:61389005
UT WOS	000531672400006
EID SCOPUS	85083821229
DOI	10.1016/j.nimb.2020.04.008
Annotation	Yttria stabilized zirconia (YSZ) is well known as a radiation-resistant material. In this study, we present results from 400 keV Ag+ implantations of the (1 0 0) YSZ single crystals to fluences ranging from 5 x 10(15) to 5 x 10(16) cm(-2). The damage depth profiling and accumulation were probed using Rutherford backscattering spectrometry in the channelling mode (RBS-C), Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The axial channelling effect of 2 MeV He+ ions in the implanted YSZ was studied. RBS-C provides us with detailed information about the displaced atoms density depth profiles progressing into greater depths, especially in the case of higher fluence. TEM was utilized to characterize the microstructure evolution and damage accumulation in the buried layer after the implantation. At the highest fluence (5 x 10(16) cm(-2)), Ag depth profile in the depth of 30-130 nm was identified in TEM bright and dark field images as well as in the electron diffraction patterns. Ag depth profiles are in agreement with depth profiles determined by RBS which show maximum Ag concentration in the depth of 94 nm. The reason for the decrease of the deformation identified by XRD in the vertical direction is the defect formation.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2021
Electronic address	https://doi.org/10.1016/j.nimb.2020.04.008

Number of the records: 1