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Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions
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SYSNO ASEP 0523535 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions Author(s) Tiagulskyi, Stanislav (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Faitová, Hana (URE-Y)
Vaniš, Jan (URE-Y) RID
Grym, Jan (URE-Y)Number of authors 5 Source Title International Semiconductor Conference (CAS 2019). - New York : IEEE, 2019 / Brezeanu G. - ISSN 1545-827X - ISBN 978-1-7281-1888-8 Pages s. 289-292 Number of pages 4 s. Publication form Print - P Action 42nd International Semiconductor Conference (CAS) Event date 09.10.2019 - 11.10.2019 VEvent location Sinaia Country RO - Romania Event type WRD Language eng - English Country US - United States Keywords Nanoprobe I-V ; Nanoscale heterojunctions ; FIB Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Electrical and electronic engineering R&D Projects GA17-00546S GA ČR - Czech Science Foundation (CSF) GA17-00355S GA ČR - Czech Science Foundation (CSF) Institutional support URE-Y - RVO:67985882 UT WOS 000514295300061 EID SCOPUS 85078434929 DOI 10.1109/SMICND.2019.8923637 Annotation Electrical properties of a single vertically-oriented n-ZnO nanorod on a p-GaN substrate are investigated by measuring their current-voltage characteristics. The current-voltage characteristics are measured using nanoprobe in the high vacuum chamber of a scanning electron microscope. The observed changes of the resistivity are attributed to the field induced change of the potential barrier at the p-n function interface Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2020
Number of the records: 1