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Towards the evaluation of defects in MoSinf2/inf using cryogenic photoluminescence spectroscopy
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SYSNO ASEP 0523058 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Towards the evaluation of defects in MoSinf2/inf using cryogenic photoluminescence spectroscopy Author(s) Verhagen, T. (CZ)
Guerra, Valentino Libero Pio (UFCH-W) ORCID, RID, SAI
Haider, Golam (UFCH-W) ORCID, RID
Kalbáč, Martin (UFCH-W) RID, ORCID
Vejpravová, J. (CZ)Source Title Nanoscale. - : Royal Society of Chemistry - ISSN 2040-3364
Roč. 12, č. 5 (2020), s. 3019-3028Number of pages 10 s. Language eng - English Country GB - United Kingdom Keywords Molybdenum compounds ; Transition metals ; Dichalcogenides TMDs Subject RIV CF - Physical ; Theoretical Chemistry OECD category Physical chemistry R&D Projects GA18-20357S GA ČR - Czech Science Foundation (CSF) EF16_013/0001821 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015073 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Open access Institutional support UFCH-W - RVO:61388955 UT WOS 000516533300063 EID SCOPUS 85079079417 DOI 10.1039/c9nr07246b Annotation Characterization of the type and density of defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) is important as the nature of these defects strongly influences the electronic and optical properties of the material, especially its photoluminescence (PL). Defect characterization is not as straightforward as it is for graphene films, where the D and D′ Raman scattering modes easily indicate the density and type of defects in the graphene layer. Thus, in addition to the Raman scattering analysis, other spectroscopic techniques are necessary to perform detailed characterization of atomically thin TMD layers. We demonstrate that PL spectroscopy performed at liquid helium temperatures reveals the key fingerprints of defects in TMDs and hence provides valuable information about their origin and concentration. In our study, we address defects in chemical vapor deposition (CVD)-grown MoS2 monolayers. A significant difference is observed between the as-grown monolayers compared with the CVD-grown monolayers transferred onto a Si/SiO2 substrate, which contain extra defects due to the transfer process. We demonstrate that the temperature-dependent Raman and PL micro-spectroscopy techniques enable disentangling the contributions and locations of various defect types in TMD systems. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2021 Electronic address http://hdl.handle.net/11104/0307466
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