Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles

Stuchlík, Jiří; Stuchlíková, The-Ha; Čermák, Jan; Kupčík, Jaroslav; Fajgar, Radek; Remeš, Zdeněk

Number of the records: 1

Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles

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SYSNO ASEP	0522709
Document Type	C - Proceedings Paper (int. conf.)
R&D Document Type	Conference Paper
Title	Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles
Author(s)	Stuchlík, Jiří (FZU-D)_{RID, ORCID} Stuchlíková, The-Ha (FZU-D)_{RID, ORCID} Čermák, Jan (FZU-D)_{RID, SAI, ORCID} Kupčík, Jaroslav (UCHP-M)_{RID, ORCID, SAI} Fajgar, Radek (UCHP-M)_{RID, ORCID, SAI} Remeš, Zdeněk (FZU-D)_{RID, ORCID}
Number of authors	6
Source Title	NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./. - Ostrava : Tanger Ltd., 2019 / Shrbená J. - ISBN 978-80-87294-89-5
Pages	s. 83-87
Number of pages	5 s.
Publication form	Print - P
Action	NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./
Event date	17.10.2018 - 19.10.2018
VEvent location	Brno
Country	CZ - Czech Republic
Event type	EUR
Language	eng - English
Country	CZ - Czech Republic
Keywords	thin films ; a-Si:H ; nanoparticles ; germanium ; tin
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LTC17029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GC16-10429J GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271 ; UCHP-M - RVO:67985858
UT WOS	000513131900014
EID SCOPUS	85062975289
Annotation	The hydrogenated amorphous silicon layers (a-Si:H) were deposited by PECVD method on quartz substrates. During interruption of PECVD process the vacuum chamber was pumped up to 10-5 Pa and 1 nm thin films of Germanium or Tin were evaporated on the surface. The materials form isolated nanoparticles (NPs) on the a-Si:H surface. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated 5 times. The a-Si:H thin films with integrated Ge or Sn NPs were characterized optically by PDS and CPM methods, and microscopically by SEM and AFM microscopies. Optical and microscopic properties of the structures are correlated and discussed considering their application in photovoltaics.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2022

Number of the records: 1