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Erbium-ion implantation of single- and nano-crystalline ZnO

SYSNO ASEP	0522518
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Erbium-ion implantation of single- and nano-crystalline ZnO
Author(s)	Cajzl, J. (CZ) Nekvindová, P. (CZ) Jeníčková, K. (CZ) Jagerová, Adéla (UJF-V)_{ORCID, SAI} Malinský, Petr (UJF-V)_{RID, ORCID, SAI} Remeš, Zdeněk (FZU-D)_{RID, ORCID} Neykova, Neda (FZU-D)_{RID, ORCID} Chang, Yu-Ying (FZU-D) Oswald, Jiří (FZU-D)_{RID, ORCID} Kentsch, U. (DE) Macková, Anna (UJF-V)_{RID, ORCID, SAI}
Number of authors	11
Source Title	Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X Roč. 464, č. 2 (2020), s. 65-73
Number of pages	9 s.
Publication form	Print - P
Language	eng - English
Country	NL - Netherlands
Keywords	ZnO ; nanocrystalline thin films ; Erbium ; ion implantation ; luminescence
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
OECD category	Materials engineering
Subject RIV - cooperation	Institute of Physics - Solid Matter Physics ; Magnetism
R&D Projects	LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA18-03346S GA ČR - Czech Science Foundation (CSF)
Method of publishing	Limited access
Institutional support	FZU-D - RVO:68378271 ; UJF-V - RVO:61389005
UT WOS	000510313800013
EID SCOPUS	85076409224
DOI	10.1016/j.nimb.2019.11.039
Annotation	This paper reports on the results of Er+ ion implantation into various ZnO structures - standard single crystal c-plane (0001) ZnO, nanostructured thin films and nanorods. Er+ ions were implanted using an ion implantation energy of 400 keV and implantation fluences in the range of 5 x 10(14) to 5 x 10(15) ions/cm(2). Er concentration depth profiles and the degree of crystal damage were measured using Rutherford backscattering spectrometry (RBS) and RBS/channelling (RBS/C). Additionally, Raman spectroscopy was used to analyse structural modifications of the prepared samples. The main focus was placed on the luminescence properties of various ZnO structures. The results showed that the characteristic bands of ZnO, i.e. near-band-edge (NBE) luminescence and deep-level emission (DLE) - that can be influenced by the excitation wavelength - appeared in the spectra of single crystals and nanorods. The characteristic luminescence bands of erbium ions in the NIR region appeared in non-annealed ZnO single-crystal samples and nano-crystalline films.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2021
Electronic address	https://doi.org/10.1016/j.nimb.2019.11.039

Number of the records: 1