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Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires
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SYSNO ASEP 0521379 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires Author(s) Šilhavík, Martin (FZU-D) ORCID
Müller, Martin (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Klementová, Mariana (FZU-D) RID, ORCID
Kočka, Jan (FZU-D) RID, ORCID, SAI
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Červenka, Jiří (FZU-D) RID, ORCIDNumber of authors 8 Article number 132103 Source Title Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 114, č. 13 (2019), s. 1-5Number of pages 5 s. Language eng - English Country US - United States Keywords silicon nanowires ; PECVD ; catalyst doping Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-12355S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000463657000015 EID SCOPUS 85063785639 DOI 10.1063/1.5086617 Annotation Foreign atoms incorporated into the crystal structure of a semiconductor have profound effects on the electronic structure and chargetransport in the material, particularly in nanoscale systems. Here, we demonstrate that catalyst-induced doping of silicon nanowires (SiNWs)can be used as an effective way for controlling dopant density and electrical conductivity in SiNWs, allowing the construction of p-n junc-tions. We investigate and compare metal incorporation and charge transport in SiNWs grown by six different metal catalysts (In, Sn, Bi, Ga,Pb, and Au) in plasma-enhanced chemical vapor deposition. The distribution of the catalytic metals within SiNWs was mapped by scanningtransmission electron microscopy using high-angle annular dark-field imaging. The metals are either homogenously distributed or segregatedin clusters on the surface or in the core of the nanowires, depending on the metal catalyst used. Each of the metal catalysts is found to play aunique role in the charge transport of SiNWs. Sn, Pb, and Au yield semiconducting SiNWs, Ga and In produce p-type self-doped SiNWs,and Bi catalyzes n-type self-doped SiNWs. A combination of these different nanowires may provide a bottom-up growth strategy for fabrica-tion of different nanowire-based electronic components Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address https://doi.org/10.1063/1.5086617
Number of the records: 1