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Er implantation into various cuts of ZnO - experimental study and DFT modelling
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SYSNO ASEP 0520885 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Er implantation into various cuts of ZnO - experimental study and DFT modelling Author(s) Nekvindová, P. (CZ)
Cajzl, J. (CZ)
Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Bottger, R. (DE)
Yatskiv, Roman (URE-Y) RID, ORCIDNumber of authors 7 Article number 152455 Source Title Journal of Alloys and Compounds. - : Elsevier - ISSN 0925-8388
Roč. 816, č. 3 (2020)Number of pages 14 s. Publication form Print - P Language eng - English Country CH - Switzerland Keywords Erbium ; ZnO ; Ion implantation ; Density functional theory modelling ; Rutherford backscattering spectroscopy Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics Subject RIV - cooperation Institute of Physics - Inorganic Chemistry
Institute of Radio Engineering and Electronics - Electronics ; Optoelectronics, Electrical EngineeringR&D Projects GA18-03346S GA ČR - Czech Science Foundation (CSF) EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support UJF-V - RVO:61389005 ; FZU-D - RVO:68378271 ; URE-Y - RVO:67985882 UT WOS 000503725300059 EID SCOPUS 85073993437 DOI 10.1016/j.jallcom.2019.152455 Annotation his paper presents a DFT study of the positions of erbium ions in the ZnO structure as well as experimental study of Er ion implantation into different crystallographic cuts of ZnO. The theoretical simulations have compared cohesive energies and defect-formation energies for different Er positions in the wurtzite ZnO structure. In the experimental part, single-crystal ZnO substrates were implanted with Er+ ions at an energy of 190 keV using fluences of 1 x 10(16) and 5 x 10(16) ion.cm(-2). The ion implantation was followed by the application of the thermal annealing in oxygen atmosphere at 1000 degrees C for 5 h. The RBS/channelling method with fine scans was used to study the positions of erbium ions and structure recovery during the annealing process. The Er-doped ZnO samples exhibited clear luminescence in the NIR spectral region at around 1.5 mu m. This work provides new results on the comparison of erbium ion implantation into different polar and non-polar crystallographic cuts of ZnO, resulting in different luminescence properties of the samples. Experimental and theoretical results are compared as well. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2021 Electronic address https://doi.org/10.1016/j.jallcom.2019.152455
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