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Damage formation and Er structural incorporation in m-plane and a-plane ZnO
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SYSNO ASEP 0520868 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Damage formation and Er structural incorporation in m-plane and a-plane ZnO Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Mikšová, Romana (UJF-V) RID, ORCID, SAI
Nekvindová, P. (CZ)
Cajzl, J. (CZ)
Rinkeviciute, E. (CZ)
Akhmadaliev, S. (DE)Number of authors 8 Source Title Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X
Roč. 460, č. 12 (2019), s. 38-46Number of pages 9 s. Publication form Print - P Action 28th International Conference on Atomic Collisions in Solids (ICACS) / 10th International Symposium on Swift Heavy Ions in Matter (SHIM) Event date 01.07.2018 - 07.07.2018 VEvent location Caen Country FR - France Event type WRD Language eng - English Country NL - Netherlands Keywords a-Plane and m-Plane ZnO doped ; damage accumulation asymmetry ; Er ion implantation in ZnO Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) R&D Projects EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA18-03346S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support UJF-V - RVO:61389005 UT WOS 000504510900008 EID SCOPUS 85054841489 DOI 10.1016/j.nimb.2018.10.003 Annotation The various crystallographic orientations in semiconductors as ZnO exhibit different resistivity under the ion beam irradiation/implantation. Study of the various crystallographic orientations is mandatory for nanostructured semiconductor system development. This paper reports on the implantation damage build-up, structural modification and Er dopant position in a-plane and m-plane ZnO implanted with Er+ 400 keV ions at the ion fluences 5 x 10(14), 2.5 x 10(15), 5 x 10(15) cm(-2) and subsequently annealed at 600 degrees C in O-2 atmosphere using Rutherford Back-Scattering spectrometry (RBS) in channelling mode as well as using Raman spectroscopy. Strongly suppressed surface damage formation was observed in both crystallographic orientations compared to the deep damage growth with the increased ion implantation fluence. More progressive damage accumulation appeared in m-plane ZnO compared to a-plane ZnO. Simultaneously, the strong Er out-diffusion depth profile in m-plane ZnO accompanied by the damage accumulation at the surface was observed after the annealing. Contrary, the surface recovery accompanied by Er concentration depth profiles keeping a normal distribution with a small maximum shift to the surface was observed in a-plane ZnO. Different structure recovery and Er behaviour was evidenced in a-plane and m-plane ZnO by RBS-C, moreover Raman spectroscopy proved a lower damage at higher ion fluences introduced in a-plane ZnO compared to m-plane. The structure modifications were discussed in connection with a damage accumulation and Er concentration depth profile shape in various ZnO crystallographic orientations in as-implanted and as-annealed samples. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2020 Electronic address https://doi.org/10.1016/j.nimb.2018.10.003
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