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Structural and compositional modification of graphene oxide by means of medium and heavy ion implantation

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    SYSNO ASEP0520686
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleStructural and compositional modification of graphene oxide by means of medium and heavy ion implantation
    Author(s) Malinský, Petr (UJF-V) RID, ORCID, SAI
    Cutroneo, Mariapompea (UJF-V) ORCID, RID, SAI
    Sofer, Z. (CZ)
    Szokolova, K. (CZ)
    Bottger, R. (DE)
    Akhmadaliev, S. (DE)
    Macková, Anna (UJF-V) RID, ORCID, SAI
    Number of authors7
    Source TitleNuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X
    Roč. 460, č. 12 (2019), s. 201-208
    Number of pages8 s.
    Publication formPrint - P
    Action28th International Conference on Atomic Collisions in Solids (ICACS) / 10th International Symposium on Swift Heavy Ions in Matter (SHIM)
    Event date01.07.2018 - 07.07.2018
    VEvent locationCaen
    CountryFR - France
    Event typeWRD
    Languageeng - English
    CountryNL - Netherlands
    Keywordschemical properties ; electrical properties ; graphene oxide ; ion irradiation
    Subject RIVBG - Nuclear, Atomic and Molecular Physics, Colliders
    OECD categoryNuclear related engineering
    R&D ProjectsLM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GA16-05167S GA ČR - Czech Science Foundation (CSF)
    EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingLimited access
    Institutional supportUJF-V - RVO:61389005
    UT WOS000504510900038
    EID SCOPUS85063099323
    DOI10.1016/j.nimb.2019.03.022
    AnnotationThe ion irradiation fluences of 5.0 x 10(14) cm(-2), 5.0 x 10(15) cm(-2) and 5.0 x 10(16) cm(-2) were used. Upon irradiation, the modified GO foils were characterised using nuclear analytical methods Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and various conventional analytical methods such as Raman spectroscopy, Attenuated Total Reflectance Fourier Transform Infrared Spectroscopy (ATR-FTIR), X-ray Photoelectron Spectroscopy (XPS), and 2-point conductivity measurements. Oxygen species removal was evidenced as the increasing function of the ion implantation fluence and oxygen depth profiles exhibited complex behaviour connected to implanted ion specie. The deep oxygen depletion in the broad surface layer accompanied by Ga diffusion into the depth was observed in Ga irradiated GO compared to Au irradiated samples which exhibited a narrow oxygen depleted layer at GO surface. XPS evidenced strong increase of C=C bonds compared to C-O bonds on the irradiated GO surface with increasing ion fluence, which was comparable for both ion species. Raman spectroscopy shows the modification of main phonon modes identified in GO. The D peak slight decrease and broadening was observed for GO irradiated with ion fluence above 5 x 1015 cm(-2) and mainly for Au ion irradiation. FTIR analysis proved the oxygen containing functional group release with the increased ion fluence, mainly C-O group release after Au ion irradiation was observed. Simultaneously H-O stretching absorption peak is in FTIR spectrum reduced more significantly for Ga irradiated GO which is in accordance with RBS elemental analysis exhibiting the more pronounced hydrogen depletion. Electrical conductivity measurement shows the linear I-V characteristics for the GO irradiated using both ion species and all ion fluences, the surface layer exhibited conductive behaviour comparing to pristine GO non-linear I-V characteristics.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing2020
    Electronic addresshttps://doi.org/10.1016/j.nimb.2019.03.022
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