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Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

SYSNO ASEP	0519076
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect
Author(s)	Jagerová, Adéla (UJF-V)_{ORCID, SAI} Malinský, Petr (UJF-V)_{RID, ORCID, SAI} Mikšová, Romana (UJF-V)_{RID, ORCID, SAI} Nekvindová, P. (CZ) Cajzl, J. (CZ) Akhmadaliev, S. (DE) Holý, V. (CZ) Macková, Anna (UJF-V)_{RID, ORCID, SAI}
Number of authors	8
Article number	061406
Source Title	Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films. - : AIP Publishing - ISSN 0734-2101 Roč. 37, č. 6 (2019)
Number of pages	11 s.
Publication form	Print - P
Language	eng - English
Country	US - United States
Keywords	Rutherford back-scattering spectrometry in channeling mode ; X-ray diffraction ; scattering
Subject RIV	BG - Nuclear, Atomic and Molecular Physics, Colliders
OECD category	Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
R&D Projects	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA18-03346S GA ČR - Czech Science Foundation (CSF)
	LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Method of publishing	Limited access
Institutional support	UJF-V - RVO:61389005
UT WOS	000504231200023
EID SCOPUS	85075464240
DOI	10.1116/1.5125320
Annotation	We present results of (0001) c-plane, (11-20) a-plane, and m-plane (10-10) ZnO bulk crystals which were implanted with 400-keV Gd+ ions using fluences of 5 x 10(14), 1 x 10(15), 2.5 x 10(15), and 5 x 10(15) cm(-2). Structural changes during the implantation and subsequent annealing were characterized by Rutherford back-scattering spectrometry in channeling mode (RBS-C). The angular dependence of the backscattered ions (angular scans) in c-, a-, and m-plane ZnO was realized to get insight into structural modification and dopant position in various crystallographic orientations. X-ray diffraction (XRD) with mapping in reciprocal space was also used for introduced defect identification. Defect-accumulation depth profiles exhibited differences for c-, a-, and m-plane ZnO, with the a-plane showing significantly lower accumulated disorder in the deeper layer in Zn-sublattice, accompanied by the preservation of ion channeling phenomena in a-plane ZnO. Enlargement of the main lattice parameter was evidenced, after the implantation, in all orientations. The highest was evidenced in a-plane ZnO. The local compressive deformation was seen with XRD analysis in polar (c-plane) ZnO, and the tensile deformation was observed in nonpolar ZnO (a-plane and m-plane orientations) being in agreement with RBS-C results. Raman spectroscopy showed distinct structural modification in various ZnO orientations simultaneously with identification of the disordered structure in O-sublattice. Nonpolar ZnO showed a significant increase in disorder in O-sublattice exhibited by E-2(high) disappearance and enhancement of A(1)(LO) and E-1(LO) phonons connected partially to oxygen vibrational modes. The lowering of the E-2(low) phonon mode and shift to the lower wavenumbers was observed in c-plane ZnO connected to Zn-sublattice disordering. Such observations are in agreement with He ion channeling, showing channeling effect preservation with only slight Gd dopant position modification in a-plane ZnO and the more progressive diminishing of channels with subsequent Gd movement to random position with the growing ion fluence and after the annealing in c-plane and m-plane ZnO.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2020
Electronic address	https://doi.org/10.1116/1.5125320

Number of the records: 1