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Modification of MoS2 structure by means of high energy ions in connection to electrical properties and light element surface adsorption
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SYSNO ASEP 0517281 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Modification of MoS2 structure by means of high energy ions in connection to electrical properties and light element surface adsorption Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Luxa, J. (CZ)
Szokolova, K. (CZ)
Sofer, Z. (CZ)Number of authors 6 Article number 100357 Source Title Surfaces and Interfaces. - : Elsevier - ISSN 2468-0230
Roč. 17, č. 12 (2019)Number of pages 10 s. Publication form Print - P Language eng - English Country NL - Netherlands Keywords MoS2 ion irradiation ; Rutherford Back-Scattering spectromectry ; defect production in 2D structures ; MoS2 electrical properties modification Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) R&D Projects EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-05167S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support UJF-V - RVO:61389005 UT WOS 000493921900020 EID SCOPUS 85069569260 DOI 10.1016/j.surfin.2019.100357 Annotation MoS2 samples were intentionally modified using high energy ions (He, Si and Au) at the ion energy of 1.8 MeV and the ion fluence ranging between 1 x 10(13) and 1 x 10(15) cm(-2) to tailor intentionally the surface electric and structural properties of MoS2. Light and medium energetic ions can be effectively used for ion beam micro-structuring in various materials e.g. graphene and MoS2, thus the material modification study under high energy ions leading to electronic stopping of ions is mandatory for this application. Rutherford Back-Scattering spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) were used for elemental analysis, including hydrogen surface depth profiling, of the modified MoS2 samples. Scanning Electron Microscopy (SEM) with Energy Dispersive X-ray (EDX) and X-ray Photoelectron Spectroscopy (XPS) analysis were used to investigate the surface morphology influenced by the irradiation as well as to follow the surface layer elemental composition. Raman spectroscopy was employed to study the structural modification and disorder accumulation caused by energetic ion irradiation. Simultaneously, two-point method was applied for electrical properties measurement. Surface morphology modification enhances with the increasing ion fluence for all ion species. Surface deterioration and sulphur depletion in MoS2 was observed not only for heaviest ion irradiation (Au) as was expected, but also for light ions (He). Interior structure damage was observed to be the most prominent in case of Au irradiation as it was concluded from the most significant A(1g) and E-2g(1) phonon shift and broadening with increasing Au ion fluence in Raman spectra. On the other hand, the interior structure deterioration was only negligible in case of He irradiated samples. Surface hydrogen content was observed to be a function of ion implantation fluence and ion mass. Electrical resistivity was increased as a consequence of ion irradiation for heaviest ions. After Si and Au irradiation, the resistivity increased for the lowest ion fluence and subsequently decreases with increasing ion fluence being higher for the irradiated samples compared to the pristine one. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2020 Electronic address https://doi.org/10.1016/j.surfin.2019.100357
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