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Fabrication of functional nanostructures in thin silicon nitride membranes

SYSNO ASEP	0512151
Document Type	A - Abstract
R&D Document Type	The record was not marked in the RIV
R&D Document Type	Není vybrán druh dokumentu
Title	Fabrication of functional nanostructures in thin silicon nitride membranes
Author(s)	Matějka, Milan (UPT-D)_{RID, ORCID, SAI} Chlumská, Jana (UPT-D)_{RID, ORCID, SAI} Krátký, Stanislav (UPT-D)_{RID, ORCID, SAI} Řiháček, Tomáš (UPT-D)_{RID, ORCID} Knápek, Alexandr (UPT-D)_{RID, ORCID, SAI} Kolařík, Vladimír (UPT-D)_{RID, ORCID, SAI}
Number of authors	6
Source Title	Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4). Book of Abstracts. - Amman : Jordan University of Science & Technology, 2019
Number of pages	2 s.
Publication form	Print - P
Action	The Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4)
Event date	02.05.2019 - 04.05.2019
VEvent location	Amman
Country	JO - Jordan
Event type	WRD
Language	eng - English
Country	JO - Jordan
Keywords	thin dielectric layers ; silicon nitride ; membranes ; electron beam lithography
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
Institutional support	UPT-D - RVO:68081731
Annotation	The silicon nitride (SiN) films are typically used in semiconductor industry as a masking or dielectric layer. SiN films are used also as a base material for membrane fabrication that can be used for microelectronic and micro optic devices (MEMS, MOMS) to modify electromagnetic radiation or charged particle beams distribution, phase or spectrum. While the basic procedure of fabrication membranes is well described, the micro- and nanopatterning of its surface brings new challenges and functionality. This paper presents a fabrication method of nano perforated SiN dielectric membrane in a silicon frame using ultra-high resolution electron-beam lithography (EBL) and reactive ion etching (RIE) technique. Silicon chips with freestanding membranes are obtained by standard silicon fabrication procedures. Preparation procedures for pattern transfer in the SiN layer through the metal and polymer etch mask are presented, involving advanced lithographic, deposition and etching techniques. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes. The properties of experimentally fabricated charged particle optics device consisting of nano-patterned SiN membrane developed for electron vortex generation in a scanning transmission electron microscope (STEM) are described. Additional possibility of using these nanostructured membranes is also discussed.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2020

Number of the records: 1