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Fabrication of functional nanostructures in thin silicon nitride membranes

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    SYSNO ASEP0512151
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleFabrication of functional nanostructures in thin silicon nitride membranes
    Author(s) Matějka, Milan (UPT-D) RID, ORCID, SAI
    Chlumská, Jana (UPT-D) RID, ORCID, SAI
    Krátký, Stanislav (UPT-D) RID, ORCID, SAI
    Řiháček, Tomáš (UPT-D) RID, ORCID
    Knápek, Alexandr (UPT-D) RID, ORCID, SAI
    Kolařík, Vladimír (UPT-D) RID, ORCID, SAI
    Number of authors6
    Source TitleFourth International Symposium on Dielectric Materials and Applications (ISyDMA 4). Book of Abstracts. - Amman : Jordan University of Science & Technology, 2019
    Number of pages2 s.
    Publication formPrint - P
    ActionThe Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4)
    Event date02.05.2019 - 04.05.2019
    VEvent locationAmman
    CountryJO - Jordan
    Event typeWRD
    Languageeng - English
    CountryJO - Jordan
    Keywordsthin dielectric layers ; silicon nitride ; membranes ; electron beam lithography
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    Institutional supportUPT-D - RVO:68081731
    AnnotationThe silicon nitride (SiN) films are typically used in semiconductor industry as a masking or dielectric layer. SiN films are used also as a base material for membrane fabrication that can be used for microelectronic and micro optic devices (MEMS, MOMS) to modify electromagnetic radiation or charged particle beams distribution, phase or spectrum. While the basic procedure of fabrication membranes is well described, the micro- and nanopatterning of its surface brings new challenges and functionality.
    This paper presents a fabrication method of nano perforated SiN dielectric membrane in a silicon frame using ultra-high resolution electron-beam lithography (EBL) and reactive ion etching (RIE) technique. Silicon chips with freestanding membranes are obtained by standard silicon fabrication procedures. Preparation procedures for pattern transfer in the SiN layer through the metal and polymer etch mask are presented, involving advanced lithographic, deposition and etching techniques. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes. The properties of experimentally fabricated charged particle optics device consisting of nano-patterned SiN membrane developed for electron vortex generation in a scanning transmission electron microscope (STEM) are described. Additional possibility of using these nanostructured membranes is also discussed.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2020
Number of the records: 1