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Fabrication of functional nanostructures in thin silicon nitride membranes
SYSNO ASEP 0512151 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Fabrication of functional nanostructures in thin silicon nitride membranes Author(s) Matějka, Milan (UPT-D) RID, ORCID, SAI
Chlumská, Jana (UPT-D) RID, ORCID, SAI
Krátký, Stanislav (UPT-D) RID, ORCID, SAI
Řiháček, Tomáš (UPT-D) RID, ORCID
Knápek, Alexandr (UPT-D) RID, ORCID, SAI
Kolařík, Vladimír (UPT-D) RID, ORCID, SAI
Number of authors 6 Source Title Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4). Book of Abstracts. - Amman : Jordan University of Science & Technology, 2019 Number of pages 2 s. Publication form Print - P Action The Fourth International Symposium on Dielectric Materials and Applications (ISyDMA 4) Event date 02.05.2019 - 04.05.2019 VEvent location Amman Country JO - Jordan Event type WRD Language eng - English Country JO - Jordan Keywords thin dielectric layers ; silicon nitride ; membranes ; electron beam lithography Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering Institutional support UPT-D - RVO:68081731 Annotation The silicon nitride (SiN) films are typically used in semiconductor industry as a masking or dielectric layer. SiN films are used also as a base material for membrane fabrication that can be used for microelectronic and micro optic devices (MEMS, MOMS) to modify electromagnetic radiation or charged particle beams distribution, phase or spectrum. While the basic procedure of fabrication membranes is well described, the micro- and nanopatterning of its surface brings new challenges and functionality.
This paper presents a fabrication method of nano perforated SiN dielectric membrane in a silicon frame using ultra-high resolution electron-beam lithography (EBL) and reactive ion etching (RIE) technique. Silicon chips with freestanding membranes are obtained by standard silicon fabrication procedures. Preparation procedures for pattern transfer in the SiN layer through the metal and polymer etch mask are presented, involving advanced lithographic, deposition and etching techniques. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes. The properties of experimentally fabricated charged particle optics device consisting of nano-patterned SiN membrane developed for electron vortex generation in a scanning transmission electron microscope (STEM) are described. Additional possibility of using these nanostructured membranes is also discussed.
Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2020
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