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Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
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SYSNO ASEP 0509851 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates Author(s) Lee, L.Y. (GB)
Frentrup, M. (GB)
Vacek, Petr (UFM-A) ORCID, RID
Massabuau, Fabien C. P. (GB)
Kappers, Menno J. (GB)
Wallis, David J. (GB)
Oliver, Rachel A. (GB)Number of authors 7 Article number 125167 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 524, OCT (2019)Number of pages 8 s. Language eng - English Country NL - Netherlands Keywords Atomic force microscopy ; Nucleation ; X-ray diffraction ; Metalorganic vapor phase epitaxy ; Nitrides ; Semiconducting gallium compounds Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Electrical and electronic engineering R&D Projects EF16_027/0008056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support UFM-A - RVO:68081723 UT WOS 000480523700011 EID SCOPUS 85073701641 DOI 10.1016/j.jcrysgro.2019.125167 Annotation Cubic zincblende (zb-)GaN nucleation layers (NLs) grown by MOVPE on 3C-SiC/Si substrates were studied to determine their optimal thickness for subsequent zb-GaN epilayer growth. The layers were characterised by atomic force microscopy, X-ray diffraction and scanning transmission electron microscopy. The as-grown NLs, with nominal thicknesses varying from 3nm to 44nm, consist of small grains which are elongated in the [1−10] direction, and cover the underlying SiC surface almost entirely. Thermal annealing of the NLs by heating in a H2/NH3 atmosphere to the elevated epilayer growth temperature reduces the substrate coverage of the films that are less than 22nm thick, due to both material desorption and the ripening of islands. The compressive biaxial in-plane strain of the NLs reduces with increasing NL thickness to the value of relaxed GaN for a thickness of 44nm. Both the as-grown and annealed NLs are crystalline and have high zincblende phase purity, but contain defects including misfit dislocations and stacking faults. The zb-GaN epilayers grown on the thinnest NLs show an enhanced fraction of the wurtzite phase, most likely formed by nucleation on the exposed substrate surface at elevated temperature, thus dictating the minimum NL thickness for phase-pure zb-GaN epilayer growth.
Workplace Institute of Physics of Materials Contact Yvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485 Year of Publishing 2020 Electronic address https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub
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