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Electrical properties of nanoscale heterojunctions formed between GaN and ZnO nanorods
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SYSNO ASEP 0502998 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Electrical properties of nanoscale heterojunctions formed between GaN and ZnO nanorods Author(s) Tiagulskyi, Stanislav (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Grym, Jan (URE-Y)
Schenk, Antonín (URE-Y)
Roesel, David (URE-Y)
Vaniš, Jan (URE-Y) RID
Hamplová, Marie (URE-Y)Number of authors 7 Source Title 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017). - Ostrava : TANGER, 2018 - ISBN 978-80-87294-81-9 Pages s. 146-151 Number of pages 6 s. Publication form Print - P Action 9th International Conference on Nanomaterials - Research and Application (NANOCON) Event date 18.10.2017 - 20.10.2017 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords Scanning electron microscope ; Hydrothermal growth ; In-situ current-voltage measurements Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Electrical and electronic engineering R&D Projects GA17-00546S GA ČR - Czech Science Foundation (CSF) GA15-17044S GA ČR - Czech Science Foundation (CSF) Institutional support URE-Y - RVO:67985882 UT WOS 000452823300023 EID SCOPUS 85051840961 Annotation Vertical periodic arrays of ZnO nanorods are prepared by hydrothermal growth on GaN templates patterned by focused ion beam. Electro-physical properties of a single vertically-oriented ZnO nanorod are investigated by measuring the current-voltage characteristics using a nanoprobe in a scanning electron microscope. This technique enables to observe the surface morphology of ZnO nanorods simultaneously with their electrical characterization in vacuum. The vacuum chamber rejects the impact of gas adsorption and light irradiation, which both affect the properties of ZnO nanorods. Moreover, mechanical damage and strain induced during the nanorod transfer are eliminated. Nonlinear current-voltage characteristics under the forward bias are explained by the tunneling-recombination process and by the space charge limited current. The high reverse bias current in the p-n heterojunction is attributed to direct tunneling via a narrow tunnel barrier Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2019
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